BFG11W/X power transistor Product specification Supersedes data S

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BFG11W/X power transistor Product specification Supersedes data S

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BFG11W/X power transistor
Product specification Supersedes data September 1995 File under Discrete Semiconductors, SC14 1996
Philips Semiconductors
Product specification
power transistor
FEATURES High power gain High efficiency Small size discrete power amplifier operating area Gold metallization ensures excellent reliability Linear non-linear operation. APPLICATIONS Common emitter class-AB operation handheld radio equipment such DECT, PHS. Driver 1800. DESCRIPTION silicon planar epitaxial transistor encapsulated plastic 4-pin dual-emitter SOT343 package.
view
handbook, columns
BFG11W/X
PINNING SOT343 collector emitter base emitter DESCRIPTION
MSB014
Marking code:
Fig.1 Simplified outline.
QUICK REFERENCE DATA performance common-emitter test circuit. MODE OPERATION Pulsed, class-AB, (GHz) (mW) (dB)
1996
Philips Semiconductors
Product specification
power transistor
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO Ptot Tstg PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature note CONDITIONS open emitter open base open collector MIN. +150
BFG11W/X
MAX.
UNIT
THERMAL CHARACTERISTICS SYMBOL PARAMETER thermal resistance from junction soldering point CONDITIONS Ptot note VALUE UNIT
Note Limiting values Thermal characteristics temperature soldering point collector tab.
handbook, full pagewidth (K/W)
MGD411
0.75 0.33 0.05 0.02 0.01
10-6 10-5 10-4 10-3 10-2 10-1
Fig.2 Transient thermal impedance from junction soldering point function pulse time; typical values.
1996
Philips Semiconductors
Product specification
power transistor
CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cut-off current current gain collector capacitance feedback capacitance CONDITIONS open emitter open base open collector
BFG11W/X
MIN.
MAX.
UNIT
APPLICATION INFORMATION performance common-emitter test circuit. MODE OPERATION Pulsed, class-AB, Ruggedness class-AB operation transistors capable withstanding load mismatch corresponding VSWR through phases, rated output power under pulsed conditions GHz: 1.25 (GHz) (mA) (mW) (dB)
handbook, halfpage
MGD412
MGD552
handbook, halfpage
(dB)
(dBc)
(mW)
Po(av) (dBm)
1990.0 MHz; 1990.1 MHz; 0.65 GHz; 1.25
Fig.4
Fig.3
Power gain efficiency functions load power; typical values.
tone intermodulation distortion efficiency functions average output power; typical values.
1996
Philips Semiconductors
Product specification
power transistor
List components used test circuit (see Figs COMPONENT C11, C12, C14, L11, Notes DESCRIPTION multilayer ceramic chip capacitor; note multilayer ceramic chip capacitor; note multilayer ceramic chip capacitor; note multilayer ceramic chip capacitor; note multilayer ceramic chip capacitor; note multilayer ceramic chip capacitor; note electrolytic capacitor stripline; note stripline; note stripline; note stripline; note stripline; note stripline; note stripline; note stripline; note stripline; note stripline; note choke metal film resistor metal film resistor metal film resistor bias transistor 78.7 38.3 BC548; note VALUE length 22.5 width length width length width length width length width length 24.5 width length width length 10.5 width length width length 19.7 width DIMENSIONS
BFG11W/X
CATALOGUE
2222 14152
4330 36301
American Technical Ceramics (ATC) capacitor, type 100A other capacitor same quality. striplines double copper-clad printed-circuit board with PTFE fibre-glass dielectric 6.15; 0.0019; thickness 0.64 copper cladding equivalent (VBE 0.65 Tamb °C).
1996
Philips Semiconductors
Product specification
power transistor
BFG11W/X
handbook, full pagewidth
bias
input
output
MGD413
Fig.5 Common-emitter test circuit class-AB operation GHz.
1996
Philips Semiconductors
Product specification
power transistor
BFG11W/X
handbook, full pagewidth
Base
Collector
Vbias
Collector
Base
MGD414
Dimensions
Fig.6 Component layout common-emitter test circuit.
1996
Philips Semiconductors
Product specification
power transistor
BFG11W/X
handbook, halfpage
MGD415
handbook, halfpage
MGD416
1800 1850 1900 1950 (MHz) 2000 1800 1850 1900 1950 (MHz) 2000
0.65
0.65
Fig.7
Input impedance function frequency (series components), typical values.
Fig.8
Load impedance function frequency (series components), typical values.
handbook, halfpage
MBA451
Fig.9
Definition transistor impedance.
1996
Philips Semiconductors
Product specification
power transistor
PACKAGE OUTLINE
BFG11W/X
handbook, full pagewidth
1.00
1.35 1.15
0.25 0.10
MSB374
Dimensions
Fig.10 SOT343.
1996
Philips Semiconductors
Product specification
power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BFG11W/X
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1996
Philips Semiconductors
Product specification
power transistor
NOTES
BFG11W/X
1996
Philips Semiconductors worldwide company
Argentina: South America Australia: Waterloo Road, NORTH RYDE, 2113, Tel. 4455, Fax. 4466 Austria: Computerstr. A-1101 WIEN, P.O. 213, Tel. 101, Fax. 1210 Belarus: Hotel Minsk Business Center, Bld. 1211, Volodarski Str. 220050 MINSK, Tel. +375 733, Fax. +375 Belgium: Netherlands Brazil: South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, James Bourchier Blvd., 1407 SOFIA, Tel. +359 211, Fax. +359 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. 7381, Fax. 8556 China/Hong Kong: Hong Kong Industrial Technology Centre, Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: South America Czech Republic: Austria Denmark: Prags Boulevard 1919, DK-2300 COPENHAGEN Tel. 2636, Fax. 1949 Finland: Sinikalliontie FIN-02630 ESPOO, Tel. +358 800, Fax. +358 80920 France: Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. 6161, Fax. 6427 Germany: D-20097 HAMBURG, Tel. Fax. Greece: 25th March Street, 17778 TAVROS, Tel. 4894 339/911, Fax. 4814 Hungary: Austria India: Philips INDIA Ltd, Shivsagar Estate, Block, Annie Besant Worli, MUMBAI 018, Tel. 4938 541, Fax. 4938 Indonesia: Singapore Ireland: Newstead, Clonskeagh, DUBLIN Tel. +353 7640 000, Fax. +353 7640 Israel: RAPAC Electronics, Kehilat Saloniki AVIV 61180, Tel. +972 0444, Fax. +972 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza Novembre 20124 MILANO, Tel. 6752 2531, Fax. 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. 3740 5130, Fax. 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. 1412, Fax. 1415 Malaysia: Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. 5214, Fax. 4880 Mexico: 5900 Gateway East, Suite 200, PASO, TEXAS 79905, Tel. 7381, Fax. 8556 Middle East: Italy Netherlands: Postbus 90050, 5600 EINDHOVEN, Bldg. Tel. 83749, Fax. 88399 Zealand: Wagener Place, C.P.O. 1041, AUCKLAND, Tel. 4160, Fax. 7811 Norway: Manglerud 0612, OSLO, Tel. 8000, Fax. 8341 Philippines: Philips Semiconductors Philippines Inc., Valero Salcedo Village, P.O. 2108 MCC, MAKATI, Metro MANILA, Tel. 6380, Fax. 3474 Poland: Lukiska 04-123 WARSZAWA, Tel. 2831, Fax. 2327 Portugal: Spain Romania: Italy Russia: Philips Russia, Usatcheva 35A, 119048 MOSCOW, Tel. 5361, Fax. 8323 Singapore: Lorong Payoh, SINGAPORE 1231, Tel. 2538, Fax. 6500 Slovakia: Austria Slovenia: Italy South Africa: S.A. PHILIPS Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. 7430 Johannesburg 2000, Tel. 5911, Fax. 5494 South America: Rocio floor, Suite CEP: PAULO-SP, Brazil, P.O. 7383 (01064-970), Tel. 2333, Fax. 1849 Spain: Balmes 08007 BARCELONA, Tel. 6312, Fax. 4107 Sweden: Kottbygatan Akalla, S-16485 STOCKHOLM, Tel. 2000, Fax. 2745 Switzerland: Allmendstrasse 140, CH-8027 Tel. 2686, Fax. 7730 Taiwan: PHILIPS TAIWAN Ltd., 23-30F, Chung Hsiao West Road, Sec. P.O. 22978, TAIPEI 100, Tel. +886 4443, Fax. +886 4444 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. 4090, Fax. 0793 Turkey: Talatpasa Cad. 80640 Tel. 2770, Fax. 6707 Ukraine: PHILIPS UKRAINE, Akademika Koroleva str., Office 165, 252148 KIEV, Tel. +380 0297/1642, Fax. +380 6991 United Kingdom: Philips Semiconductors Ltd., Bath Road, Hayes, MIDDLESEX 5BX, Tel. 5000, Fax. 8421 United States: East Arques Avenue, SUNNYVALE, 94088-3409, Tel. 7381, Fax. 8556 Uruguay: South America Vietnam: Singapore Yugoslavia: PHILIPS, Pasica 5/v, 11000 BEOGRAD, Tel. +381 344, Fax.+381
other countries apply Philips Semiconductors, Marketing Sales Communications, Building BE-p, P.O. 218, 5600 EINDHOVEN, Netherlands, Fax. 24825 Philips Electronics N.V. 1996 SCA49
Internet: ADDRESS CONTENT SOURCE June 1996
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights. Printed Netherlands
127101/1200/02/pp12 Date release: 1996 Document order number: 9397 00883

BFG11W/X power transistor Product specification Supersedes data S

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