General Power Transistors 1996 File under Discrete Semiconductors

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General Power Transistors 1996 File under Discrete Semiconductors

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General Power Transistors
1996 File under Discrete Semiconductors, SC08b
Philips Semiconductors
Power Transistors
QUALITY Total Quality Management Philips Semiconductors Quality Company, renowned high quality products service. keep alive this tradition constantly aiming towards ultimate standard, that zero defects. This guided Total Quality Management (TQM) system, basis which described following paragraphs. QUALITY ASSURANCE Based 9000 standards, customer standards such Ford MDQ. factories certified 9000 external inspectorates. PARTNERSHIPS WITH CUSTOMERS co-operations, design-in agreements, ship-to-stock, just-in-time self-qualification programmes, application support. PARTNERSHIPS WITH SUPPLIERS Ship-to-stock, statistical process control 9000 audits. QUALITY IMPROVEMENT PROGRAMME Continuous process system improvement, design improvement, complete statistical process control, realization final objective zero defects, logistics improvement ship-to-stock just-in-time agreements. Advanced quality planning During design development products processes, quality built-in advanced quality planning. Through failure-mode-and-effect analysis (FMEA) critical parameters detected measures taken ensure good performance these parameters. capability process steps also planned this phase. Product conformance assurance product conformance integral part quality assurance (QA) practice. This achieved Incoming material management through partnerships with suppliers. In-line quality assurance monitor process reproducibility during manufacture initiate necessary corrective action. Critical process steps 100% under statistical process control.
General
Acceptance tests finished products verify conformance with device specification. test results used quality feedback corrective actions. inspection test requirements detailed general quality specifications. Periodic inspections monitor measure conformance products. Product reliability With increasing complexity Original Equipment Manufacturer (OEM) equipment, component reliability must extremely high. research laboratories development departments study failure mechanisms semiconductors. Their studies result design rules process optimization highest built-in product reliability. Highly accelerated tests applied products reliability evaluation. Rejects from reliability tests from customer complaints submitted failure analysis, result corrective action. Customer responses quality improvement depends joint action with customer. need customers' inputs invite constructive comments aspects performance. Please contact local sales representative. Recognition high quality products services demonstrated many Quality Awards granted major customers international organizations. ELECTRON TYPE NUMBERING Basic type number This type designation code applies discrete semiconductor devices (not integrated circuits), multiples such devices, semiconductor chips Darlington transistors. FIRST LETTER first letter gives information about material active part device. Germanium other material with band Silicon other material with band Gallium arsenide (GaAs) other material with band more Compound materials, e.g. cadmium sulphide.
1996
Philips Semiconductors
Power Transistors
SECOND LETTER second letter indicates function which device primarily designed. same letter used multi-chip devices with similar elements. following list power types defined j-mb power types j-mb K/W. Diode; signal, power Diode; variable capacitance Transistor; power, audio frequency Transistor; power, audio frequency Diode; tunnel Transistor; power, high frequency RATING SYSTEMS Version letter(s)
General
letters added basic type number indicate minor electrical mechanical variants basic type. letters never have fixed meaning, except that letter indicates reverse polarity letter indicates surface mounted device (SMD).
rating systems described those recommended publication number 134. Definitions terms used ELECTRONIC DEVICE electronic tube valve, transistor other semiconductor device. This definition excludes inductors, capacitors, resistors similar components. CHARACTERISTIC characteristic inherent measurable property device. Such property electrical, mechanical, thermal, hydraulic, electro-magnetic nuclear, expressed value stated recognized conditions. characteristic also related values, usually shown graphical form. BOGEY ELECTRONIC DEVICE electronic device whose characteristics have published nominal values type. bogey electronic device particular application obtained considering only those characteristics that directly related application. RATING value that establishes either limiting capability limiting condition electronic device. determined specified values environment operation, stated suitable terms. Limiting conditions either maxima minima. RATING SYSTEM principles upon which ratings established which determine their interpretation. rating system indicates division responsibility between device manufacturer circuit designer, with object ensuring that working conditions exceed ratings.
multiple dissimilar devices/miscellaneous devices; e.g. oscillators. Also with special third letter, under "Serial number" Diode; magnetic sensitive Transistor; power, high frequency Photocoupler Radiation detector; e.g. high sensitivity photo-transistor; with special third letter
Radiation generator; e.g. LED, laser; with special third letter Control switching device; e.g. thyristor, power; with special third letter Transistor; power, switching Control switching device; e.g. thyristor, power; with special third letter Transistor; power, switching Diode; multiplier, e.g. varactor, step recovery Diode; rectifying, booster Diode; voltage reference regulator, transient suppressor diode; with special third letter.
Surface acoustic wave device
SERIAL NUMBER number comprises three figures running from devices primarily intended consumer equipment, letter etc.) figures running from devices primarily intended industrial professional equipment.(1).
When supply these serial numbers exhausted, serial number expanded three figures industrial types four figures consumer types.
1996
Philips Semiconductors
Power Transistors
Absolute maximum rating system Absolute maximum ratings limiting values operating environmental conditions applicable electronic device specified type, defined published data, which should exceeded under worst probable conditions. These values chosen device manufacturer provide acceptable serviceability device, taking responsibility equipment variations, environmental variations, effects changes operating conditions variations characteristics device under consideration other electronic devices equipment. equipment manufacturer should design that, initially throughout life device, absolute maximum value intended service exceeded with device, under worst probable operating conditions with respect supply voltage variation, equipment component variation, equipment control adjustment, load variations, signal variation, environmental conditions, variations characteristics device under consideration other electronic devices equipment. Design maximum rating system Design maximum ratings limiting values operating environmental conditions applicable bogey electronic device specified type defined published data, should exceeded under worst probable conditions. These values chosen device manufacturer provide acceptable serviceability device, taking responsibility effects changes operating conditions variations characteristics electronic device under consideration. equipment manufacturer should design that, initially throughout life device, design maximum value intended service exceeded with bogey electronic device, under worst probable operating conditions with respect supply voltage variation, equipment component variation, variation characteristics other devices equipment, equipment control adjustment, load variation, signal variation environmental conditions. Design centre rating system Design centre ratings limiting values operating environmental conditions applicable bogey electronic
General
device specified type defined published data, should exceeded under normal conditions. These values chosen device manufacturer provide acceptable serviceability device average applications, taking responsibility normal changes operating conditions rated supply voltage variation, equipment component variation, equipment control adjustment, load variation, signal variation, environmental conditions, variations characteristics electronic devices. equipment manufacturer should design that, initially, design centre value intended service exceeded with bogey electronic device equipment operating stated normal supply voltage. CURRENT DRAINING power transistors, drain current rating based maximum operating junction temperature device. value specified will raise temperature maximum allowable temperature while case held power dissipation equals RDS(on). From maximum RDS(on) published values maximum allowable dissipation, current rating (PD(max)/RDS(on))0.5. LETTER SYMBOLS letter symbols transistors detailed this section based publication number 148. Basic letters representation currents, voltages powers, lower-case letter symbols used indicate instantaneous values that vary with time. other values represented upper-case letters. Electrical parameters(1) external circuits circuits which device forms only part represented upper-case letters. Lower-case letters used representation electrical parameters inherent device. Inductances capacitances always represented upper-case letters.
purpose this publication, term 'electrical
parameters' applies four-pole matrix parameters, elements electrical equivalent circuits, electrical impedances admittances, inductances capacitances.
1996
Philips Semiconductors
Power Transistors
following list basic letter symbols used with semiconductor devices: susceptance (imaginary part admittance) capacitance conductance (real part admittance) hybrid parameter current inductance resistance (real part impedance) j-mb (min) (max) (OV)
General
fall, forward forward transfer) gate holding heatsink input junction ambient junction mounting base cathode load peak value minimum maximum mounting base third subscript: terminal mentioned open-circuit overload pulse turn-off first subscript: reverse reverse transfer), rise. second subscript: repetitive, recovery. third subscript: with specified resistance between terminal mentioned reference terminal first subscript: series, source, storage, stray, switching. second subscript: surge (non-repetitive). third subscript: short circuit between terminal mentioned reference terminal storage thermal threshold total working specified circuit reference regulator (zener) input (four-pole matrix) output (four-pole matrix).
power voltage reactance (imaginary part impedance) admittance impedance. Subscripts Upper-case subscripts used indication continuous (DC) values (without signal), e.g. instantaneous total values, e.g. average total values, e.g. IB(AV), ID(AV) peak total values, e.g. IBM, root-mean-square total values, e.g. IB(RMS), ID(RMS). Lower-case subscripts used indication values applying varying component alone: instantaneous values, e.g. root-mean-square values, e.g. Ib(rms), id(rms) peak values, e.g. Ibm, average values, e.g. Ib(av), id(av). following list subscripts used with basic letter symbols semiconductor devices: (AV), (av) (BO) (BR) case anode ambient average value base breakover breakdown case collector controllable drain emitter
(RMS), (rms) root-mean-square value
1996
Philips Semiconductors
Power Transistors
Applications examples TRANSISTOR CURRENTS first subscript indicates terminal carrying current (conventional current flow from external circuit into terminal positive). Examples: Ibm, Idm. ELECTRICAL PARAMETERS TRANSISTOR VOLTAGES voltage indicated first subscripts: first identifies terminal which voltage measured second reference terminal circuit node. second subscript omitted when there possibility confusion. Examples: VBE, VGS, vBE, vGS, vbe, vgs, Vbem, Vgsm. SUPPLY VOLTAGES CURRENTS Supply voltages supply currents indicated repeating appropriate terminal subscript. Examples: VDD, VCC, IEE, ISS. reference terminal indicated third subscript. Examples: VCCE, VDDS. DEVICES WITH MORE THAN TERMINAL SAME KIND device more than terminal same kind, subscript formed appropriate letter terminal, followed number. Hyphens used avoid confusion multiple subscripts. Examples: continuous (DC) current flowing into second base terminal continuous (DC) current flowing into second gate terminal
General
continuous (DC) current flowing into drain terminal second unit
V1C-2C continuous (DC) voltage between collector terminals first second units. V1D-2D continuous (DC) voltage between drain terminals first second units.
upper-case variant subscript used designation static (DC) values. Examples: static value forward current transfer common-emitter configuration current gain) static value forward transconductance common-source configuration current gain) value external emitter resistance. value drain-source resistance.
static value slope line from origin operating point appropriate characteristic curve, i.e. quotient appropriate electrical quantities operating point. lower-case variant subscript used designation small-signal values. Examples: small-signal value short-circuit forward current transfer common-emitter configuration small-signal value short-circuit forward transconductance common-source configuration
small-signal value input impedance more than subscript used, subscripts which choice style allowed, subscripts chosen upper-case lower-case. Examples: hFE, yRE, hfe, gFS. FOUR-POLE MATRIX PARAMETERS first letter subscript double numeric subscript) indicates input, output, forward transfer reverse transfer. Examples: h11), h22), h21), h12).
VB2-E continuous (DC) voltage between terminals second base emitter terminals VG2-S continuous (DC) voltage between terminals second gate source terminals. MULTIPLE DEVICES multiple unit devices, subscripts modified number preceding letter subscript. Hyphens used avoid confusion multiple subscripts. Examples: continuous (DC) current flowing into collector terminal second unit
1996
Philips Semiconductors
Power Transistors
further subscript used identification circuit configuration. When confusion possible, this further subscript omitted. Examples: h21e), h21E). DISTINCTION BETWEEN REAL IMAGINARY PARTS necessary distinguish between real imaginary parts electrical parameters, additional subscripts used. basic symbols real imaginary parts exist, these used. Examples: jXi, jbfe. such symbols exist suitable, notation shown following examples used. Examples: (h<6~ib) etc. real part (hib) etc. imaginary part hib. MARKING CODES purposes matched pair applications, power transistors marked with code that indicates their gate-source voltage range (see Table Table CODE Marking codes selection 1.00 1.10 1.10 1.20 1.20 1.30 1.30 1.40 1.40 1.50 1.50 1.60 1.60 1.70 1.70 1.80 1.80 1.90 1.90 2.00 2.00 2.10 2.10 2.20 2.20 2.30 2.30 2.40 2.40 2.50 2.50 2.60 2.60 2.70 2.70 2.80 CODE 2.80 2.90 2.90 3.00 3.00 3.10 3.10 3.20 3.20 3.30 3.30 3.40 3.50 3.50 3.60 3.60 3.70 3.70 3.80 3.80 3.90 3.90 4.00 4.00 4.10 4.10 4.20 4.20 4.30 4.30 4.40 4.40 4.50 SOLDER PASTE Reflow soldering MOUNTING SOLDERING (SOT223) Mounting methods
General
There basic forms electronic component construction, those with leads through-hole mounting microminiature types surface mounting (SMD). Through-hole mounting gives very rugged construction uses well established soldering methods. Surface mounting advantages high packing density plus high-speed automated assembly. Surface mounting techniques complex this chapter gives only simplified overview subject. Although many electronic components available surface mounting types, some this often leads through-hole well surface mounting components substrate mixed print). components affects soldering methods that applied. substrate having SMDs mounted both sides through-hole components likely suitable reflow wave soldering. double sided mixed print that through-hole components some SMDs side densely packed SMDs other normally undergoes sequential combination reflow wave soldering. When mixed print only through-hole components side SMDs other, wave soldering usually applied.
This preferred soldering technique SOT223 components.
Most reflow soldering techniques utilize paste that mixture flux solder. solder paste applied substrate before components placed. sufficient viscosity hold components place and, therefore, application adhesive required. Drying solder paste preheating increases viscosity prevents tendency components become displaced during soldering process. Preheating also minimizes thermal shock drives flux solvents.
Screen printing
This best high-volume production method solder paste application. emulsion-coated, fine mesh screen with apertures etched emulsion coincide with surfaces soldered placed over substrate. squeegee passed across screen force solder paste through apertures substrate.
1996
Philips Semiconductors
Power Transistors
layer thickness screened solder paste usually between REFLOW TECHNIQUES
General
Thermal conduction
prepared substrates carried conveyor belt, first through preheating stage then through soldering stage. Heat transferred substrate conduction through belt. Figure shows theoretical time/temperature relationship thermal conduction reflow soldering. This method particularly suited thick film substrates often combined with infrared heating.
Stencilling
this method stencil with etched holes pass paste used. thickness stencil determines amount amount solder paste that deposited substrate. This method also suited high-volume work.
Dispensing
computer-controlled pressure syringe dispenses small doses paste where required. This method mainly suitable small production runs laboratory use.
Infrared
infrared oven several heating elements giving broad spectrum infrared radiation, normally above below closed loop belt system. There separate zones preheating, soldering cooling. Dwell time soldering zone kept short possible prevent damage components substrate. typical heating profile shown Fig.2. This reflow method often applied double-sided prints.
transfer
picks droplet solder paste from reservoir transfers surface substrate component. multi-pin arrangement with pins positioned match substrate possible this speeds process time.
MBC938
MBC937
preheating max. soldering cooling
Fig.2 Fig.1 Theoretical time/temperature curve typical thermal conductive reflow cycle.
Typical temperature profile infrared oven operating belt speed 0.41 mm/min.
1996
Philips Semiconductors
Power Transistors
Vapour phase
substrate immersed vapours suitable boiling liquid. vapours transfer latent heat condensation substrate solder reflow takes place. Temperature controlled precisely boiling point liquid given pressure. Some systems employ vapour zones, above other. elevator tray, suspended from hoist mechanism passes substrate vertically through first vapour zone into secondary soldering zone then hoists vapour cooled. theoretical time/temperature relationship this method shown Fig.3.
General
with adhesive wave soldering. spot adhesive carefully placed between each substrate. adhesive then heat-cured withstand forces soldering process, during which components fully immersed solder. There several methods adhesive application.
transfer method
used transfer droplet adhesive from reservoir precise position surface where required. size droplet depends diameter, depth which dipped reservoir, rheology adhesive, temperature adhesive surrounds. part array (bed nails) that corresponds exactly with required adhesive positions substrate. With this method, adhesive applied whole side substrate operation therefore suitable high-volume production used with pre-loaded mixed prints. Alternatively, pins used transfer adhesive components before they placed substrate. This adds flexibility production runs where variations layout must accommodated.
MBC939
free cooling removal phase time soldering zone
Screen printing method
fine mesh screen coated with emulsion except positions where adhesive required pass. screen placed substrate squeegee passing across forces adhesive through uncoated parts screen. amount adhesive printed-through depends size uncoated screen areas, thickness screen coating, rheology adhesive various machine parameters. With this method, substrate must flat pre-loaded mixed prints cannot accommodated.
entering phase soldering zone time soldering zone
Fig.3
Theoretical time/temperature curve relationship dual vapour reflow soldering.
Pressure syringe method
computer-controlled syringe dispenses adhesive from enclosed reservoir means pulses compressed air. adhesive size depends size syringe nozzle, duration pressure pulsed viscosity adhesive. This method most suited volume production. advantage flexibility provided computer programmability.
Wave soldering This soldering technique applied SOT223 components. ADHESIVE APPLICATION Since there connecting wires retain them, leadless short-leaded components held place
1996
Philips Semiconductors
Power Transistors
FLUXING quality soldered connections between components substrate critical circuit performance reliability. Flux promotes solderability connecting surfaces chosen following attributes: Removal surface oxides Prevention reoxidation Transference heat from source joint area Residue that non-corrosive residue corrosive, should easy clean away after soldering Ability improve wettability (readiness metal surface form alloy interface with solder) ensure strong joints with electrical resistance Suitability desired method flux application. wave soldering, liquified flux usually applied foam, spray wave. PRE-HEATING
General
Pre-heating substrate components performed immediately before soldering. This reduces thermal shock substrate enters soldering process, causes flux become more viscous accelerates chemical action flux speeds soldering action. SOLDERING Wave soldering usually best method when high throughput rates required. single wave soldering principle (see Fig.4) most straight forward method used simple substrates with two-terminal components. More complex substrates with increased circuit density closer spacing conductors pose problems nonwetting (dry joints) solder bridging. Bridging occur across closely spaced leads multi-leaded devices well across adjacent leads neighbouring components. Nonwetting usually caused components with plastic bodies. plastic wetted solder creates depression solder wave, which augmented surface tension. This cause shadow behind component prevent solder from reaching joint surfaces. smooth laminar solder wave required avoid bridging high pressure wave needed completely cover areas that difficult wet. These conflicting demands difficult attain single wave dual wave techniques long overcoming problem. dual wave machine (see Fig.5), substrate first comes into contact with turbulent wave which high vertical velocity. This ensures good solder contact with both edges components prevents joints from being missed. second smooth laminar wave completes formation solder fillet, removes excess solder prevents bridging. Figure indicates time/temperature relationship measured soldering site dual wave soldering. methods wave soldering developing continually. example, Omega System single wave agitated pulses, which combines functions smoothness turbulence. another, lambda wave injects bubbles final part wave. further innovation hollow wave which solder wave flows opposite direction substrate.
Foam
Flux foam made forcing low-pressure, water-free clean through aerator immersed liquid flux. Fine bubbles flux directed onto substrate/component surfaces where they burst form thin, even layer. flux also penetrates plated-through holes. flux chosen foaming capabilities.
Spray
Several methods spray fluxing exist, most common involves mesh drum rotating liquid flux. blown into drum which, when passing through fine mesh, directs spray flux onto underside substrate. amount flux deposited controllable speed substrate passing through spray, speed rotation drum density flux.
Wave
wave fluxer creates double flowing wave liquid flux which adheres surface substrate passes through. Wave height control essential soft wipe-off brush usually incorporated remove excess flux from substrate.
1996
Philips Semiconductors
Power Transistors
General
board travel
handbook, halfpage
board travel
MBC935
MBC934
solder solder
Fig.4 Single wave soldering principle.
Fig.5 Dual wave soldering principle.
Footprint design footprint design component surface mounting influenced many factors:
handbook, halfpage
MBC936
Features component, dimensions tolerances Circuit board manufacturing processes Desired component density Minimum spacing between components Circuit tracks under component Component orientation wave soldering) Positional accuracy solder resist solder lands Positional accuracy solder paste solder lands reflow soldering) Component placement accuracy Soldering process parameters Solder joint reliability parameters.
time
Fig.6
Typical time-temperature curve measured soldering site.
1996
Philips Semiconductors
Power Transistors
Hand soldering microminiature components possible solder microminiature components with light-weight hand-held soldering iron, this method obvious drawbacks should restricted laboratory and/or incidental repairs production circuits: Hand-soldering time-consuming therefore expensive. component cannot positioned accurately connecting tags come into contact with substrate damage There risk breaking substrate internal connections component could damaged. component package could damaged iron. THERMAL CONSIDERATIONS Thermal resistance Circuit performance long-term reliability affected temperature transistor die. Normally, both improved keeping temperature (junction temperature) low. Electrical power dissipated semiconductor device source heat. This increases temperature
General
about some reference point, normally ambient temperature still air. size increase temperature depends amount power dissipated circuit thermal resistance between heat source reference point. Devices lose most their heat conduction when mounted printed board, substrate heatsink. Referring Fig.7 (for surface mounted devices mounted substrate), heat conducts from source (the junction) package leads soldered connections substrate. Some heat radiates from package into surrounding where dispersed convection forced cooling air. Heat that radiates from substrate dispersed same way. elements thermal resistance shown Fig.8 defined follows: j-mb thermal resistance from junction mounting base thermal resistance from junction case thermal resistance from junction soldering point thermal resistance from case ambient thermal resistance from junction ambient.
handbook, halfpage
junction
j-mb
handbook, halfpage
soldering point case
MBB438
ambient
MBB439
Heat radiates from package ambient. Heat conducts leads `2', solder joints substrate `4'.
Fig.8 Fig.7 Heat losses.
Representation thermal resistance paths device mounted substrate printed board.
1996
Philips Semiconductors
Power Transistors
temperature junction depends ability package mounting transfer heat from junction region ambient environment. basic relationship between junction temperature power dissipation where: Tamb Ptot maximum junction temperature ambient temperature maximum power handling capability device, including effects external loads when applicable.
General
MBB446
handbook, halfpage
(K/W)
Tamb Ptot (Rth s-a) Tamb Ptot (Rth j-a)
expression max, only Tamb varied user. package mounting technique flow cooling factors that affect s-a. device power dissipation controlled limited extent under recommended usage, supply voltage circuit loading dictate fixed power maximum. value essentially independent external mounting method cooling air; sensitive materials used package construction, bonding method area, which fixed. applications where temperature case stabilized large temperature-controlled heatsink, junction temperature calculated from Tcase Ptot using soldering point definition, from Tsolder Ptot j-s. Values j-s, given device data sheets. Thermal resistance (Rth s-a) thermal resistance from soldering point ambient, that from case ambient depends shape material tracks substrate illustrated Figure
area (mm2
Single-sided, unplated. Single-sided, plated. Double-sided, unplated. Double-sided, plated.
Fig.9
Thermal resistance (Rth s-a) function area different configurations epoxy fibre-glass circuit board.
1996
Philips Semiconductors
Power Transistors
FLAGE-MOUNTED POWER TRANSISTORS Mounting recommendations Ensure holes heatsinks free from burrs. Minimum depth tapped holes heatsinks 4-40 UNC-2A cheese-head screws with flat washer spread joint pressure. transistors dissipating heatsink thickness should least copper 99.9% ETP-Cu) aluminium (99% Al). thickness heatsink should increased proportionally transistors dissipating more power. minimum flatness mounting area 0.02 Mounting area roughness should less than Avoid, much possible, flux flux solutions because flux penetrate even hermetically sealed ceramic-capped transistors. wash printed-circuit boards before mounting power transistors, then solder transistors into place without using flux. Transistor leads tinned dipping them full-length into solder bath temperature about flux should used during tinning. Recommended heatsink compounds: (silicone-free) from Austerlitz-Electronics; Comp. Trans. from from Corning; Trans-Heat from Friis-Mikkelsen. When transistor removed from heatsink, flange, almost certainly, will have been distorted joint pressure. Grinding lapping flange required flatness smoothness necessary before transistor remounted. Mounting sequence Apply thin layer evenly-distributed heatsink compound flange. Position device with flat washers place. Tighten screws until finger-tight (0.05 Nm). Further tighten screws until specified torque reached lubricate); torques, refer package outlines section this data handbook. lock mounting screws, allow about minutes them bed-down after specified torque been applied, re-tighten specified torque apply locking paint. Mounting recommendations SOT365
General
ensure good thermal contact prevent mechanical stresses when bolted down, flatness mounting base designed typically better than mounting area heatsink should flat free from burrs loose particles. heatsink should rigid prone bowing under thermal cycling conditions. thickness solid heatsink should less than ensure rigid assembly. thin, even layer thermal compound should used between mounting base heatsink achieve best possible thermal conduction. Excessive thermal compound will result increase thermal resistance possible bowing mounting base; little will also result poor thermal conduction. module should mounted heatsink using bolts with flat washers. bolts should first tightened "finger tight" then further tightened alternating steps maximum torque Once mounted heatsink, module leads soldered printed-circuit board. soldering iron used temperature maximum seconds distance from plastic cap. precautions must taken protect device from electro-static damage. Mounting recommendations SOT409 Both metallized ground plate leads contribute heatflow. best results recommended mount transistor grounded metallized area printed-circuit board equipped with large number metallized through-holes filled with solder. thermal resistance (Rth mb-h) achieved heatsink compound used when printed-circuit board mounted heatsink.
1996
Philips Semiconductors
Power Transistors
Thermal behaviour
General
coefficients linear thermal expansion shown Table used calculate thermal expansion different header parts. Table Coefficients linear thermal expansion flange-mounted packages PACKAGE SOT119 SOT123 SOT171 SOT273 SOT262 SOT268 SOT324 CAPSTAN HEADERS Table Mounting data capstan headers MOUNTING STUD DIAMETER ITEM Thread Maximum diameter threaded stud Diameter heatsink mounting hole Mounting thickness Mounting torque: minimum maximum Distance from heatsink printed-circuit board 0.75 0.85 +0/-0.2
SYMBOL
FLANGE
LEAD FRAME
UNIT
18.3 10-6
10-6 10-6
10-6
10-6 10-6
TOLERANCE UNIT +0.05/-0
8-32 UNC-2A(B) 4.14 4.15
10-32 UNF-2A(B) 4.80 4.85
UNF-2A(B) 6.33 6.35
1996
Philips Semiconductors
Power Transistors
Mounting recommendations Avoid, much possible, flux flux solutions because flux penetrate even hermetically sealed ceramic-capped transistors. wash printed-circuit boards before mounting power transistors, then solder transistors into place without using flux. Transistor leads tinned dipping them full-length into solder bath temperature about flux should used during tinning. Heatsink surfaces mounting hole flat, parallel free burrs oxidation. locking washers, their locking action deteriorate time comparative softness most heatsink materials. flat washer used spread joint pressure. Ensure positive clearance exists between leads printed circuit board, this prevents upward lead-bending consequent damage encapsulation Recommended heatsink compounds: (silicone-free) from Austerlitz-Electronics; Comp. Trans. from from Corning; Trans-Heat from Friis-Mikkelsen. full mounting torque should applied only once life transistor. pre-assembly testing, apply more than two-thirds specified torque. Mounting sequence Apply thin layer evenly-distributed heatsink compound heatsink. Position device with flat washer place. Tighten screws until finger-tight (0.05 Nm). Further tighten screws until specified torque reached lubricate); torques, refer package outline section this data handbook. lock mounting screws, allow about minutes them bed-down after specified torque been applied, re-tighten specified torque apply locking paint. HANDLING DEVICES Electrostatic charges Electrostatic charges exist many things; example, man-made-fibre clothing, moving machinery, objects with blowing across them, plastic storage bins, sheets paper stored plastic envelopes, paper from electrostatic copying machines, people. charges 1996
General
caused friction between surfaces, least which non-conductive. magnitude polarity charges depend different affinities electrons materials rubbing together, friction force humidity surrounding air. Electrostatic discharge transfer electrostatic charge between bodies different potentials occurs with direct contact when induced electrostatic field. Power transistors sensitive electrostatic discharge and, avoid damage, following precautions must taken. Work station Figure shows working area suitable safely handling electrostatic sensitive devices. work bench, surface which conductive covered antistatic sheet. Typical resistivity bench surface between cm2. floor should also covered with antistatic material. following precautions should observed: Persons work bench should earthed wrist strap resistor. mains-powered electrical equipment should connected earth leakage switch. Equipment cases should earthed. Relative humidity should maintained between 65%. ionizer should used neutralize objects with immobile static charges. Receipt storage devices packed dispatch antistatic conductive containers, usually boxes, tubes blister tape. fact that contents sensitive electrostatic discharge shown warning labels both primary secondary packing. devices should kept their original packing whilst storage. bulk container partially unpacked, unpacking should performed protected work station. devices that stored temporarily should packed conductive antistatic packing carriers. Assembly devices must removed from their protective packing with earthed component pincers short-circuit clips. Short-circuit clips must remain place during mounting, soldering cleansing/drying processes. remove more devices from storage packing than
Philips Semiconductors
Power Transistors
needed time. Production/assembly documents should state that product contains electrostatic sensitive devices that special precautions need taken. tools used during assembly, including soldering tools solder baths, must earthed. hand tools should conductive antistatic material and, where possible, should insulated. Measuring testing completed circuit boards must done protected work station. Place soldered side
General
circuit board conductive antistatic foam remove short-circuit clips. Remove circuit board from foam, holding board only edges. Make sure circuit board does touch conductive surface work bench. After testing, replace circuit board conductive foam await packing. Assembled circuit boards should handled same unmounted devices. They should also carry warning labels packed conductive antistatic packing.
handbook, full pagewidth
MLB049
Earthing rail. Resistor (500 ±10%, Ionizer. Work bench. Chair. Wrist strap. Electrical equipment. Conductive surface/antistatic sheet. Antistatic floor.
Fig.10 Protected work station.
1996

General Power Transistors 1996 File under Discrete Semiconductors

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