UT3403 P-channel enhancement mode Power MOSFET, designed with high den

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UT3403 P-channel enhancement mode Power MOSFET, designed with high den

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UNISONIC TECHNOLOGIES CO., UT3403
UT3403 P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, on-resistance, excellent thermal electrical capabilities, operation with gate voltages. This device suitable load switch applications.
Power MOSFET
SYMBOL
3.Drain
2.Gate
*Pb-free plating product number: UT3403L
1.Source
ORDERING INFORMATION
Ordering Number Normal Lead Free Plating UT3403-AE3-R UT3403L-AE3-R Package SOT-23 Assignment Packing Tape Reel
MARKING
www.unisonic.com.tw Copyright 2007 Unisonic Technologies Co.,
QW-R502-145.A
UT3403
ABSOLUTE MAXIMUM RATINGS unless otherwise specified)
Power MOSFET
PARAMETER SYMBOL RATING UNITS Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current (Note -2.6 Pulsed Drain Current (Note Power Dissipation Junction Temperature +150 Storage Temperature TSTG +150 Note: Absolute maximum ratings those values beyond which device could permanently damaged. Absolute maximum ratings stress ratings only functional device operation implied.
THERMAL DATA
PARAMETER Junction-to-Ambient SYMBOL UNIT °C/W
ELECTRICAL CHARACTERISTICS =25°C, unless otherwise noted)
PARAMETER CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance (Note SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) TEST CONDITIONS ID=-250µA, VGS=0V VDS=-24V, VGS=0V VDS=0V, VGS=±12V VDS=VGS, ID=-250µA VGS=-10V, ID=-2.6A VGS=-4.5V, ID=-2A VGS=-2.5V, ID=-1A ±100 -0.6 31.5 1.32 -0.85 -1.4 UNIT
DYNAMIC PARAMETERS Input Capacitance CISS =0V, =-15V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time (Note tD(ON) Turn-ON Rise Time VGS=-10V, VDS=-15V RL=6, Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time Total Gate Charge (Note VGS=-4.5V, VDS=-15V, Gate-Source Charge ID=-2.5A Gate-Drain Charge SOURCE- DRAIN DIODE RATINGS CHARACTERISTICS Drain-Source Diode Forward Voltage(Note2) VGS=0V, IS=-1A Maximum Continuous Drain-Source Diode Forward Current Reverse Recovery Time IF=-2.5A, dI/dt=100A/µs Reverse Recovery Charge Note: Pulse width limited TJ(MAX) Pulse width 300us, duty cycle Surface mounted copper board
15.8
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
QW-R502-145.A
UT3403
TYPICAL CHARACTERISTICS
Power MOSFET
Drain Current,-ID
On-Resistance Drain Current Gate Voltage VGS=-2.5V
Drain Current,-ID
Capacitance (pF)
Capacitance Characteristics
Drain Source OnResistance,RDS(ON)
CISS COSS CRSS Drain Source Voltage,-VDS
VGS=-4.5V VGS=-10V Drain Current,-ID
On-Resistance Gate-Source Voltage ID=-2A Reverse Drain Current,-IS
1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06
Body-Diode Characteristics
Drain Source OnResistance,RDS(ON)
Gate Source Voltage,-VGS
Body Diode Forward Voltage,-VSD
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
QW-R502-145.A
UT3403
TYPICAL CHARACTERISTICS(Cont.)
Power MOSFET
Gate Source Voltage,-VGS
assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications products described contained herein. products designed life support appliances, devices systems where malfunction these products reasonably expected result personal injury. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice.
UNISONIC TECHNOLOGIES CO.,
www.unisonic.com.tw
Power
QW-R502-145.A

UT3403 P-channel enhancement mode Power MOSFET, designed with high den

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