INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
|
|
Top Searches for this datasheet
97317
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
(ON) Trench IGBT Technology switching losses Maximum Junction temperature Square RBSOA 100% parts tested clamped inductive load Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package
IRGP4072DPbF
VCES 300V 40A, 100°C
VCE(on) typ. 1.46V
Benefits
High Efficiency wide range applications Suitable wide range switching frequencies (ON) Switching losses Rugged transient Performance increased reliability
n-channel
Applications
Uninterruptible Power Supplies Battery operated vehicles Welding Solar converters inverters
TO-247AC
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C 25°C 100°C 25°C 100°C TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current Clamped Inductive Load Current Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Soldering Temperature, sec. Mounting Torque, 6-32 Screw (0.063 (1.6mm) from case) (1.1
Max.
+150
Units
Continuous Gate-to-Emitter Voltage
Thermal Resistance
Parameter
(IGBT) (Diode) Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
Typ.
0.24
Max.
0.70 0.87
Units
°C/W
www.irf.com
04/16/08
IRGP4072DPbF
Electrical Characteristics 25°C (unless otherwise specified)
Parameter
V(BR)CES
V(BR)CES/TJ
Min.
Typ.
0.20 1.46 1.59 2.26 1.53
Max. Units
1.70 2.69 ±100
Conditions
1.0mA
Ref.Fig
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. Breakdown Voltage
VCE(on) VGE(th)
VGE(th)/TJ
Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
V/°C (25°C-150°C) 40A, 15V, 25°C 40A, 15V, 150°C VGE, 500µA mV/°C VGE, 1.0mA (25°C 150°C) 25V, 300V 300V, 150°C 40A, 150°C ±30V
5,6,7 9,10,11
ICES IGES
Switching Characteristics 25°C (unless otherwise specified)
Parameter
Eoff Etotal td(on) td(off) Eoff Etotal td(on) td(off) Cies Coes Cres RBSOA Erec Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Reverse Recovery Energy Diode Diode Reverse Recovery Time Peak Reverse Recovery Current
Min.
Typ.
1247 1076 1789 2265
Max. Units
1017 1542 240V
Conditions
Ref.Fig
40A, 240V, 200µH, 25°C
Energy losses include tail diode reverse recovery
40A, 240V, 200µH, 25°C
40A, 240V, VGE=15V RG=10, L=200µH, 150°C
Energy losses include tail diode reverse recovery
WF1,
40A, 240V, 200µH 150°C
1.0Mhz 150°C, 120A 240V, =300V +15V
FULL SQUARE
150°C 240V, 15V, =200µH, 150nH
Notes: (VCES), 15V, 200µH, This only applied TO-247AC package. Pulse width limited max. junction temperature.
www.irf.com
IRGP4072DPbF
(°C)
Ptot
(°C)
Fig. Maximum Collector Current Case Temperature
1000
Fig. Power Dissipation Case Temperature
1000
10µsec 100µsec
25°C 150°C Single Pulse
1msec
1000
1000
Fig. Forward 25°C, 150°C; =15V
Fig. Reverse Bias 150°C; =15V
8.0V
8.0V
Fig. Typ. IGBT Output Characteristics -40°C; 60µs
Fig. Typ. IGBT Output Characteristics 25°C; 60µs
www.irf.com
IRGP4072DPbF
8.0V
-40°c 25°C 150°C
Fig. Typ. IGBT Output Characteristics 150°C; 60µs
Fig. Typ. Diode Forward Characteristics 60µs
Fig. Typical -40°C
Fig. Typical 25°C
25°C 150°C
Fig. Typical 150°C
Fig. Typ. Transfer Characteristics 50V; 10µs
www.irf.com
IRGP4072DPbF
3000 2500 2000
Energy (µJ)
1000
EOFF 1500 1000
Swiching Time (ns)
tdOFF
tdON
Fig. Typ. Energy Loss 150°C; 200µH; 240V,
2500 EOFF 2000
Fig. Typ. Switching Time 150°C; 200µH; 240V,
1000 tdOFF
Swiching Time (ns)
Energy (µJ)
1500 1000
tdON
Fig. Typ. Energy Loss 150°C; 200µH; 240V, 40A;
Fig. Typ. Switching Time 150°C; 200µH; 240V, 40A;
Fig. Typ. Diode 150°C
Fig. Typ. Diode 150°C
www.irf.com
IRGP4072DPbF
2600 2400
2200
(µC)
2000 1800 1600 1400 1200
(A/µs)
1000 (A/µs)
Fig. Typ. Diode diF/dt 240V; 15V; 40A; 150°C
Fig. Typ. Diode diF/dt 240V; 15V; 150°C
1200 1000
Energy (µJ)
10000
Cies
Capacitance (pF)
1000
Coes Cres
Fig. Typ. Diode 150°C
Gate-to-Emitter Voltage
Fig. Typ. Capacitance VGE= 1MHz
150V 240V
Total Gate Charge (nC)
Fig. Typical Gate Charge 40A; 100µH
www.irf.com
IRGP4072DPbF
0.50
Thermal Response thJC
0.20 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE THERMAL RESPONSE
(°C/W)
0.01788 0.12215 0.33816 0.22196
(sec)
0.00001 0.000108 0.001262 0.007931
i/Ri i/Ri
Notes: Duty Factor t1/t2 Peak Zthjc 0.001 0.01
0.001 1E-006
1E-005
0.0001
Rectangular Pulse Duration (sec)
Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01
(°C/W) (sec) 0.2758 0.000776 0.3708 0.2252 0.002206 0.013373
0.01
i/Ri i/Ri
0.001
SINGLE PULSE THERMAL RESPONSE
Notes: Duty Factor t1/t2 Peak Zthjc 0.001 0.01
0.0001 1E-006
1E-005
0.0001
Rectangular Pulse Duration (sec)
Fig. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
www.irf.com
IRGP4072DPbF
Fig.C.T.1 Gate Charge Circuit (turn-off)
Fig.C.T.2 RBSOA Circuit
clamp
RIVER
Fig.C.T.3 Switching Loss Circuit
Fig.C.T.4 Resistive Load Circuit
www.irf.com
IRGP4072DPbF
TEST CURRENT
test current
Loss
-100 -0.35
0.15 time(µs)
0.65
-100 -0.4 -0.3 -0.2 -0.1 time (µs)
Fig. Typ. Turn-off Loss Waveform 150°C using Fig. CT.3
Fig. Typ. Turn-on Loss Waveform 150°C using Fig. CT.3
-100 -150 -200 -250 -300 -350 -400 -1.00
Peak Peak
3.00
0.00
1.00 time (µS)
2.00
Fig. Typ. Diode Recovery Waveform 150°C using Fig. CT.3
www.irf.com
test current
IRGP4072DPbF
TO-247AC Package Outline
Dimensions shown millimeters (inches)
TO-247AC Part Marking Information
@Y6HQG@) DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G`
,5)3(
TO-247AC package recommended Surface Mount Application.
Note: most current drawing please refer website http://www.irf.com/package/ Data specifications subject change without notice. This product been designed qualified Industrial market. Qualification Standards found IR's site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 04/08
www.irf.com
Other recent searches
SLV4710 - SLV4710 SLV4710 Datasheet
HUW0124060-01B - HUW0124060-01B HUW0124060-01B Datasheet
PMA-5454+ - PMA-5454+ PMA-5454+ Datasheet
JTOS-1000W - JTOS-1000W JTOS-1000W Datasheet
IDT74FST163212 - IDT74FST163212 IDT74FST163212 Datasheet
HE80032L - HE80032L HE80032L Datasheet
HE80000 - HE80000 HE80000 Datasheet
CY29949 - CY29949 CY29949 Datasheet
CDLE-041-017 - CDLE-041-017 CDLE-041-017 Datasheet
AS29LV800 - AS29LV800 AS29LV800 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
