Applications High Frequency Isolated DC-DC Converters with Synchronous
|
|
|
Top Searches for this datasheet
95097A
Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification Telecom Industrial High Frequency Buck Converters Computer Processor Power Lead-Free
IRFR3706PbF IRFU3706PbF
HEXFET® Power MOSFET
VDSS
RDS(on)
9.0m
Benefits
Ultra-Low Gate Impedance Very RDS(on) 4.5V Fully Characterized Avalanche Voltage Current
D-Pak IRFR3706
I-Pak IRFU3706
Absolute Maximum Ratings
SymboVDS 25°C 100°C 25°C 100°C TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction Storage Temperature Range
Max.
0.59
Units
mW/°C
Thermal Resistance
Parameter
Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient
Typ.
Max.
Units
°C/W
When mounted square (FR-4 G-10 Material) recommended footprint soldering techniques refer application note #AN-994
Notes through page
www.irf.com
12/14/04
IRFR/U3706PbF
Static 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Typ. 0.021 11.5 Max. Units V/°C -200 Conditions 250µA Reference 25°C, 10V, 4.5V, 2.8V, 7.5A VGS, 250µA 16V, 16V, 125°C -12V
Dynamic 25°C (unless otherwise specified)
Symbogfs Qoss td(on) td(off) Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. 2410 1070 Max. Units Conditions 16V, 4.5V 4.5V 1.0MHz
Avalanche Characteristics
SymboEAS
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
Max.
Units
Diode Characteristics
SymboIS
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge
Min. Typ. Max. Units 0.88 0.82
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 36A, 125°C, 36A, 25°C, 36A, VR=20V di/dt 100A/µs 125°C, 36A, VR=20V di/dt 100A/µs
www.irf.com
IRFR/U3706PbF
1000
4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V
1000
Drain-to-Source Current
Drain-to-Source Current
4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V
2.5V
20µs PULSE WIDTH
2.5V
20µs PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
1000
DS(on) Drain-to-Source Resistance (Normalized)
Drain-to-Source Current
20µs PULSE WIDTH
Gate-to-Source Voltage
Junction Temperature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
www.irf.com
IRFR/U3706PbF
100000
Gate-to-Source Voltage
Ciss Cgd, SHORTED Crss Coss
10000
Capacitance(pF)
Ciss
1000
Coss
Crss
VDS, Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
1000
Reverse Drain Current
OPERATION THIS AREA LIMITED RDS(on)
10us
Drain Current
100us
10ms
175° Single Pulse
,Source-to-Drain Voltage
VDS, Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
www.irf.com
IRFR/U3706PbF
LIMITED PACKAGE
Drain Current
4.5V
D.U.T.
-VDD
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
Maximum Drain Current Case Temperature
td(on)
d(off)
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.0001 0.001 0.01
0.01 0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
IRFR/U3706PbF
Single Pulse Avalanche Energy (mJ)
DRIVER
BOTTOM
D.U.T
0.01
12a. Unclamped Inductive Test Circuit
V(BR)DSS
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
www.irf.com
IRFR/U3706PbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Driver Gate Drive P.W. Period
P.W. Period VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices N-Channel HEXFET® Power MOSFETs
www.irf.com
IRFR/U3706PbF
D-Pak (TO-252AA) Package Outline
Dimensions shown millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: IRFR120 WITH SEMBLY CODE 1234 SEMBLED 1999 EMBLY LINE Note: embly line position indicates "Lead-Free" PART NUMBER ERNAT IONAL RECT IFIER LOGO
IRFU120 916A
EMBLY CODE
DATE CODE YEAR 1999 WEEK LINE
PART NUMBER INTERNATIONAL RECTIFIER LOGO
IRFU120
CODE DESIGNAT LEAD-FREE PRODUCT (OPTIONAL) YEAR 1999 WEEK SEMBLY CODE
EMBLY CODE
www.irf.com
IRFR/U3706PbF
I-Pak (TO-251AA) Package Outline
Dimensions shown millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: THIS IRFU120 ASSEMBLY CODE 5678 ASSEMBLED 1999 ASSEMBLY LINE Note: assembly line position indicates "Lead-F ree" ERNAT IONAL RECT IFIER LOGO PART NUMBER
IRFU120 919A
ASSEMBLY CODE
CODE YEAR 1999 WEEK LINE
ERNAT IONAL RECT IFIER LOGO PART NUMBER
U120
EMBLY CODE
CODE DESIGNAT LEAD-FREE PRODUCT (OPT IONAL) YEAR 1999 WEEK EMBLY CODE
www.irf.com
IRFR/U3706PbF
D-Pak (TO-252AA) Tape Reel Information
Dimensions shown millimeters (inches)
16.3 .641 15.7 .619
16.3 .641 15.7 .619
12.1 .476 11.9 .469
FEED DIRECTION
.318 .312
FEED DIRECTION
NOTES CONTROLLING DIMENSION MILLIMETER. DIMENSIONS SHOWN MILLIMETERS INCHES OUTLINE CONFORMS EIA-481 EIA-541.
INCH
NOTES OUTLINE CONFORMS EIA-481.
Notes:
Repetitive rating; pulse width limited
max. junction temperature.
Pulse width 400µs; duty cycle Calculated continuous current based maximum allowable
junction temperature. Package limitation current 30A.
Starting 25°C, 0.54mH
28A.
measured approximately 90°C Data specifications subject change without notice. This product been designed qualified Industrial market. Qualification Standards found IR's site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 12/04
www.irf.com
Note: most current drawings please refer website http://www.irf.com/package/
Other recent searches
TP620 - TP620 TP620 Datasheet
TP622 - TP622 TP622 Datasheet
TP628 - TP628 TP628 Datasheet
SFI-5 - SFI-5 SFI-5 Datasheet
MUR860 - MUR860 MUR860 Datasheet
MN10200 - MN10200 MN10200 Datasheet
GSIB15A20 - GSIB15A20 GSIB15A20 Datasheet
GSIB15A80 - GSIB15A80 GSIB15A80 Datasheet
AS-1FE-BX-20 - AS-1FE-BX-20 AS-1FE-BX-20 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
