IRF530NPbF Advanced Process Technology Ultra On-Resistance Dynami
|
|
|
Top Searches for this datasheet
94962
IRF530NPbF
Advanced Process Technology Ultra On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET
VDSS 100V RDS(on)
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. TO-220 package universally preferred commercial-industrial applications power dissipation levels approximately watts. thermal resistance package cost TO-220 contribute wide acceptance throughout industry.
Description
TO-220AB
Absolute Maximum Ratings
Parameter
25°C 100°C 25°C dv/dt TSTG Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Soldering Temperature, seconds Mounting torque, 6-32 srew
Max.
0.47 (1.6mm from case
Units
W/°C V/ns
Thermal Resistance
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
0.50
Max.
2.15
Units
°C/W
www.irf.com
01/30/04
IRF530NPbF
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy
Min.
Typ. 0.11
Max. Units Conditions 250µA V/°C Reference 25°C, 10V, 9.0A VGS, 250µA 50V, 9.0A 100V, 80V, 150°C -100 -20V 9.0A 10V, Fig. 9.0A 10V, Fig. Between lead, (0.25in.) from package center contact 1.0MHz, Fig. 9.0A, 2.3mH
Source-Drain Ratings Characteristics
Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 9.0A, 25°C, 9.0A di/dt 100A/µs Intrinsic turn-on time negligible (turn-on dominated LS+LD)
Repetitive rating; pulse width limited Starting 25°C, 2.3mH
175°C
max. junction temperature. (See fig. 9.0A, VGS=10V (See Figure
Pulse width 400µs; duty cycle This typical value device destruction represents
operation outside rated limits.
This calculated value limited 175°C
9.0A, di/dt 410A/µs, V(BR)DSS,
www.irf.com
IRF530NPbF
8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
Drain-to-Source Current
Drain-to-Source Current
8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
RDS(on) Drain-to-Source Resistance (Normalized)
Drain-to-Source Current
20µs PULSE WIDTH
Gate-to-Source Voltage
Junction Temperature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
www.irf.com
IRF530NPbF
1600
Gate-to-Source Voltage
1MHz Ciss SHORTED Crss Coss
9.0A
Capacitance (pF)
1200
Ciss
Coss
Crss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
Reverse Drain Current
OPERATION THIS AREA LIMITED DS(on)
Drain-to-Source Current
100µsec 1msec 25°C 175°C Single Pulse
10msec
,Source-to-Drain Voltage
1000
Drain-toSource Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
www.irf.com
IRF530NPbF
D.U.T.
Drain Current
-VDD
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
Maximum Drain Current Case Temperature
td(on) d(off)
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 0.05 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.0001 0.001 0.01
0.02 0.01
0.01 0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
IRF530NPbF
Single Pulse Avalanche Energy (mJ)
DRIVER
BOTTOM
3.7A 6.4A 9.0A
D.U.T
0.01
12a. Unclamped Inductive Test Circuit
V(BR)DSS
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
www.irf.com
IRF530NPbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled controlled Duty Factor D.U.T. Device Under Test
Reverse Polarity D.U.T P-Channel
Driver Gate Drive P.W. Period
P.W. Period
[VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
[ISD
5.0V Logic Level Drive Devices N-channel HEXFET® power MOSFETs
www.irf.com
IRF530NPbF
TO-220AB Package Outline
2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240)
Dimensions shown millimeters (inches)
-B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
15.24 (.600) 14.84 (.584)
1.15 (.045)
LEAD ASSIGNMENTS IGBTs, CoPACK GATE GATE DRAIN GATE DRAINSOURCE COLLECTOR SOURCE EMITTER DRAIN
LEAD ASSIGNMENTS
HEXFET
14.09 (.555) 13.47 (.530)
DRAIN
4.06 (.160) 3.55 (.140)
COLLECTOR
1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027)
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION INCH
2.92 (.115) 2.64 (.104)
OUTLINE CONFORMS JEDEC OUTLINE TO-220AB. HEATSINK LEAD MEASUREMENTS INCLUDE BURRS.
TO-220AB Part Marking Information
XAMPL 1010 CODE 1789 1997 LINE IONAL CODE
Note: assembly line position indicates "Lead-Free"
CODE 1997
Data specifications subject change without notice. This product been designed qualified Industrial market. Qualification Standards found IR's site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information.01/04
www.irf.com
Note: most current drawings please refer website http://www.irf.com/package/
Other recent searches
ZX95-595+ - ZX95-595+ ZX95-595+ Datasheet
VP0300B - VP0300B VP0300B Datasheet
VQ2001J - VQ2001J VQ2001J Datasheet
LM5032 - LM5032 LM5032 Datasheet
GHR16 - GHR16 GHR16 Datasheet
DIN41612 - DIN41612 DIN41612 Datasheet
IEC603-2 - IEC603-2 IEC603-2 Datasheet
A1479-1B - A1479-1B A1479-1B Datasheet
EVGW - EVGW EVGW Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
