Power Field Effect Transistors Channel Enhancement Mode Lateral M
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Document Number: MRF6S21190H Rev. 3/2008
Power Field Effect Transistors
Channel Enhancement Mode Lateral MOSFETs
Designed CDMA base station applications with frequencies from 2110 2170 MHz. Suitable TDMA, CDMA multicarrier amplifier applicat applications. Typical Single Carrier CDMA Performance: Volts, 1600 Pout Watts Avg., Full Frequency Band, 3GPP Test Model DPCH with Clipping, Channel Bandwidth 3.84 MHz, Input Signal 0.01% Probability CCDF. Power Gain Drain Efficiency Device Output Signal 0.01% Probability CCDF ACPR Offset 3.84 Channel Bandwidth Capable Handling 10:1 VSWR, Vdc, 2140 MHz, Watts Output Power Features 100% Tested Guaranteed Output Power Capability Characterized with Series Equivalent Large Signal Impedance Parameters Internally Matched Ease Integrated Protection Designed Digital Predistortion Error Correction Systems Designed Lower Memory Effects Wide Instantaneous Bandwidth Applications RoHS Compliant Tape Reel. Suffix Units inch Reel.
MRF6S21190HR3 MRF6S21190HSR3
2110 2170 MHz, AVG., SINGLE CDMA LATERAL CHANNEL POWER MOSFETs
CASE 465B STYLE MRF6S21190HR3
CASE 465C STYLE 880S MRF6S21190HSR3
Table Maximum Ratings
Rating Drain Source Voltage Gate Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Operation 25°C Derate above 25°C Symbol VDSS Tstg Value 0.5, 0.5, +150 Unit W/°C
Table Thermal Characteristics
Characteristic Thermal Resistance, Junction Case Case Temperature 85°C, Case Temperature 83°C, Symbol Value (1,2) 0.29 0.30 Unit °C/W
MTTF calculator available http://www.freescale.com/rf. Select Software Tools/Development Tools/Calculators access MTTF calculators product. Refer AN1955, Thermal Measurement Methodology Power Amplifiers. http://www.freescale.com/rf. Select Documentation/Application Notes AN1955.
Freescale Semiconductor, Inc., 2008. rights reserved.
MRF6S21190HR3 MRF6S21190HSR3
Device Data Freescale Semiconductor
Table Protection Characteristics
Test Methodology Human Body Model (per JESD22 A114) Machine Model (per EIA/JESD22 A115) Charge Device Model (per JESD22 C101) Class (Minimum) (Minimum) (Minimum)
Table Electrical Characteristics 25°C unless otherwise noted)
Characteristic Characteristics Zero Gate Voltage Drain Leakage Current (VDS Vdc, Vdc) Zero Gate Voltage Drain Leakage Current (VDS Vdc, Vdc) Gate Source Leakage Current (VGS Vdc, Vdc) Characteristics Gate Threshold Voltage (VDS Vdc, Adc) Gate Quiescent Voltage (VDD Vdc, 1600 mAdc, Measured Functional Test) Drain Source Voltage (VGS Vdc, Adc) Dynamic Characteristics Reverse Transfer Capacitance (VDS mV(rms)ac MHz, Vdc) Output Equivalent Capacitance (VDS mV(rms)ac MHz, Vdc) Input Capacitance (VDS Vdc, mV(rms)ac MHz) Crss Cout Ciss VGS(th) VGS(Q) VDS(on) 0.12 0.21 0.31 IDSS IDSS IGSS Symbol Unit
Functional Tests Freescale Test Fixture, system) Vdc, 1600 Pout Avg., 2112.5 2167.5 MHz, Single Carrier CDMA, 3GPP Test Model DPCH, Clipping, Input Signal 0.01% Probability CCDF. ACPR measured 3.84 Channel Bandwidth Offset. Power Gain Drain Efficiency Output Peak Average Ratio 0.01% Probability CCDF Adjacent Channel Power Ratio Input Return Loss ACPR 14.5 17.5
Typical Performances Freescale Test Fixture, system) Vdc, 1600 2110 2170 Bandwidth Video Bandwidth Pout where (Tone Spacing from VBW) IMD3 IMD3 frequency IMD3 (both sidebands) Gain Flatness Bandwidth Pout Avg. Average Deviation from Linear Phase Bandwidth Pout Average Group Delay Pout 2140 Part Part Insertion Phase Variation Pout 2140 Gain Variation over Temperature 30°C +85°C) Part internally matched both input output. Delay 0.16 0.52 0.016
dB/°C
MRF6S21190HR3 MRF6S21190HSR3 Device Data Freescale Semiconductor
VBIAS INPUT
VSUPPLY
OUTPUT
VSUPPLY
0.744 0.632 0.400 0.042 0.322 0.313 0.123
0.084 0.084 0.450 0.580 0.580 0.040 0.121
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
0.145 1.320 Microstrip 0.508 0.320 Microstrip 0.429 0.279 Microstrip 0.322 0.084 Microstrip 0.735 0.084 Microstrip Arlon CuClad 250GX 0300 0.030, 2.55
Figure MRF6S21190HR3(HSR3) Test Circuit Schematic Table MRF6S21190HR3(HSR3) Test Circuit Component Designations Values
Part C10, C11, C12, C16, C13, Description Short Ferrite Bead Chip Capacitors Chip Capacitor Chip Capacitor Chip Capacitor Chip Capacitors Electrolytic Capacitor Chip Capacitors Tantalum Capacitors Electrolytic Capacitors Chip Resistor Chip Resistor Part Number 2743019447 ATC100B8R2JT500XT ATC100B470JT500XT ATC100B100JT500XT ATC100B560JT500XT CDR33BX104AKYS EMVY500ADA100MF55G GRM55DR61H106KA88 T491X226K035AT EMVY500ADA221MJA0G CRCW12061001FKEA CRCW120610R0FKEA Manufacturer Fairrite Kemet Nippon Chemi Murata Kemet Nippon Chemi Vishay Vishay
MRF6S21190HR3 MRF6S21190HSR3 Device Data Freescale Semiconductor
AREA
MRF6S21190H/HS Rev.
Figure MRF6S21190HR3(HSR3) Test Circuit Component Layout
MRF6S21190HR3 MRF6S21190HSR3 Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
DRAIN EFFICIENCY 18.5 17.5 Gps, POWER GAIN (dB) 16.5 15.5 14.5 13.5 2060 2080 2100 2120 2140 2160 2180 2200 PARC Single-Carrier W-CDMA, 3.84 Channel Bandwidth Input Signal 0.01% Probability (CCDF) Vdc, Pout (Avg.), 1600 PARC (dB) -0.5 -1.5 -2.5 2220
FREQUENCY (MHz)
Figure Output Peak Average Ratio Compression (PARC) Broadband Performance Pout Watts Avg.
16.5 Gps, POWER GAIN (dB) 15.5 14.5
Vdc, Pout (Avg.), 1600 Single-Carrier W-CDMA, 3.84 Channel Banwidth Input Signal 0.01% Probability (CCDF)
DRAIN EFFICIENCY
PARC (dB)
-2.5 -3.5 2080 2100 2120 2140 2160 2180 2200 2220
13.5 PARC 12.5 2060
FREQUENCY (MHz)
Figure Output Peak Average Ratio Compression (PARC) Broadband Performance Pout Watts Avg.
IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 2400 Gps, POWER GAIN (dB) 2000 1600
1200 2400 2000 1600 Vdc, 2135 MHz, 2145 Two-Tone Measurements, Tone Spacing Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS)
1200
Vdc, 2135 MHz, 2145 Two-Tone Measurements, Tone Spacing
Figure Tone Power Gain versus Output Power
Figure Third Order Intermodulation Distortion versus Output Power MRF6S21190HR3 MRF6S21190HSR3
Device Data Freescale Semiconductor
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) Vdc, 1600 2135 MHz, 2145 Two-Tone Measurements, Tone Spacing Vdc, Pout (PEP), 1600 Two-Tone Measurements f2)/2 Center Frequency 2140 IM3-U IM5-U IM5-L IM7-L IM7-U TWO-TONE SPACING (MHz) IM3-L
Order Order Order Pout, OUTPUT POWER (WATTS)
Figure Intermodulation Distortion Products versus Output Power
Figure Intermodulation Distortion Products versus Tone Spacing
OUTPUT COMPRESSION 0.01% PROBABILITY CCDF (dB) 43.79 65.39 85.07 Actual Ideal
DRAIN EFFICIENCY
Vdc, 1600 2140 Single-Carrier W-CDMA, 3.84 Channel Bandwidth Input Signal 0.01% Probability (CCDF)
Pout, OUTPUT POWER (WATTS)
Figure Output Peak Average Ratio Compression (PARC) versus Output Power
-30_C Gps, POWER GAIN (dB) 25_C Pout, OUTPUT POWER (WATTS) 1600 2140 85_C 25_C -30_C 85_C
DRAIN EFFICIENCY Gps, POWER GAIN (dB)
1600 2140 Pout, OUTPUT POWER (WATTS)
Figure Power Gain Drain Efficiency versus Output Power MRF6S21190HR3 MRF6S21190HSR3
Figure Power Gain versus Output Power
Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
MTTF (HOURS)
JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF hours when device operated Vdc, Pout Avg., 29%. MTTF calculator available http:/www.freescale.com/rf. Select Software Tools/Development Tools/Calculators access MTTF calculators product.
Figure MTTF versus Junction Temperature
CDMA TEST SIGNAL
PROBABILITY Input Signal (dB) 0.01 0.001 0.0001 W-CDMA. ACPR Measured 3.84 Channel Bandwidth Offset. Input Signal 0.01% Probability CCDF -100 -110 -7.2 -5.4 -3.6 -1.8 FREQUENCY (MHz) -ACPR 3.84 Integrated -ACPR 3.84 Integrated 3.84 Channel
PEAK-TO-AVERAGE (dB)
Figure CCDF CDMA 3GPP, Test Model DPCH, Clipping, Single Carrier Test Signal
Figure Single Carrier CDMA Spectrum
MRF6S21190HR3 MRF6S21190HSR3 Device Data Freescale Semiconductor
2220 Zload
2060
Zsource
2220
2060
Vdc, 1600 Pout Avg. 2060 2080 2100 2120 2140 2160 2180 2200 2220 Zsource 7.001 j7.706 6.859 j7.408 6.710 j7.052 6.573 j6.707 6.446 j6.355 6.339 j5.987 6.251 j5.653 6.170 j5.272 6.138 j4.974 Zload 2.628 j0.118 2.602 j0.415 2.604 j0.672 2.566 j0.901 2.536 j1.175 2.538 j1.411 2.547 j1.654 2.533 j1.892 2.508 j2.119
Zsource Test circuit impedance measured from gate ground. Zload Test circuit impedance measured from drain ground. Output Matching Network
Input Matching Network
Device Under Test
source
load
Figure Series Equivalent Source Load Impedance
MRF6S21190HR3 MRF6S21190HSR3 Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
(FLANGE)
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M-1994. CONTROLLING DIMENSION: INCH. DIMENSION MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DELETED INCHES 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 0.010 0.015 MILLIMETERS 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 0.254 0.381
(INSULATOR)
(LID) (INSULATOR)
(LID)
(FLANGE)
SEATING PLANE
STYLE DRAIN GATE SOURCE
CASE 465B ISSUE MRF6S21190HR3
(FLANGE)
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M-1994. CONTROLLING DIMENSION: INCH. DIMENSION MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 0.010 0.015 MILLIMETERS 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 0.254 0.381
(INSULATOR)
(LID) (INSULATOR)
(LID)
(FLANGE)
STYLE DRAIN GATE SOURCE
SEATING PLANE
CASE 465C ISSUE 880S MRF6S21190HSR3
MRF6S21190HR3 MRF6S21190HSR3 Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer following documents your design process. Application Notes AN1955: Thermal Measurement Methodology Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances LDMOS Devices
REVISION HISTORY
following table summarizes revisions this document.
Revision Date Feb. 2008 Mar. 2008 Initial Release Data Sheet Added Fig. MTTF versus Junction Temperature, Description
MRF6S21190HR3 MRF6S21190HSR3 Device Data Freescale Semiconductor
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MRF6S21190HR3 MRF6S21190HSR3
Document Number: Device Data MRF6S21190H Rev. 3/2008 Freescale Semiconductor
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