FDS6679AZ P-Channel PowerTrench® MOSFET -30V, -13A, General Descr

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FDS6679AZ P-Channel PowerTrench® MOSFET -30V, -13A, General Descr

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FDS6679AZ P-Channel PowerTrench® MOSFET
FDS6679AZ P-Channel PowerTrench® MOSFET
-30V, -13A, General Description
This P-Channel MOSFET producted using Fairchild Semiconductor's advanced PowerTrench process that been especially tailored minimize on-state resistance. This device well suited Power Management load switching applications common Notebook Computers Portable Battery Packs.
July 2008
Features
rDS(on) 9.3m -10V, -13A rDS(on) 14.8m -4.5V, -11A Extended range (-25V) battery applications protection level typical (note High performance trench technology extremely rDS(on) High power current handing capability RoHS Compliant
SO-8
MOSFET Maximum Ratings 25°C unless otherwise noted
Symbol TSTG Operating Storage Temperature Parameter Drain Source Voltage Gate Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Single Operation (Note (Note (Note (Note Ratings +150 Units
Thermal Characteristics
Thermal Resistance Junction Ambient (Note Thermal Resistance Junction Case (Note °C/W °C/W
Package Marking Ordering Information
Device Marking FDS6679AZ Device FDS6679AZ Reel Size 13'' Tape Width 12mm Quantity 2500 units
©2008 Fairchild Semiconductor Corporation FDS6679AZ Rev.
www.fairchildsemi.com
Electrical Characteristics 25°C unless otherwise noted
Symbol Parameter Test Conditions Units
FDS6679AZ P-Channel PowerTrench® MOSFET
Characteristics
BVDSS BVDSS IDSS IGSS Drain Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate Source Leakage Current -250µA, -250µA, referenced 25°C -24V, VGS=0V ±25V, VDS=0V mV/°C
Characteristics (Note
VGS(th) VGS(th) rDS(on) Gate Source Threshold Voltage Gate Source Threshold Voltage Temperature Coefficient VDS, -250µA -250µA, referenced 25°C -10V, -13A Drain Source Resistance -4.5V, -11A -10V, -13A, 125°C -5V, -13A -1.9 11.8 10.7 14.8 13.4 mV/°C
Forward Transconductance
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -15V, 1MHz 2890 3845
Switching Characteristics (Note
td(on) td(off) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate Source Gate Charge Gate Drain Charge -15V, -10V, -13A -15V, -5V, -13A -15V, -10V,
Drain-Source Diode Characteristic
Source Drain Diode Forward Voltage -2.1A Reverse Recovery Time Reverse Recovery Charge -13A, di/dt 100A/µs -13A, di/dt 100A/µs -0.7 -1.2
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
50°C/W when mounted copper
b)105°C/W when mounted copper
125°C/W when mounted minimun
Scale letter size paper Pulse Test:Pulse Width <300µs, Duty Cycle <2.0% diode connected between gate source serves only protection against ESD. gate overvoltage rating implied.
FDS6679AZ Rev.
www.fairchildsemi.com
FDS6679AZ P-Channel PowerTrench® MOSFET
Typical Characteristics 25°C unless otherwise noted
PULSE DURATION 80µs DUTY CYCLE 0.5%MAX
4.5V 3.5V
NORMALIZED DRAIN SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT
3.5V 4.5V
PULSE DURATION 80µs DUTY CYCLE 0.5%MAX
-VDS, DRAIN SOURCE VOLTAGE
-ID, DRAIN CURRENT(A)
Figure Region Characteristics
Figure Normalized On-Resistance Drain Current Gate Voltage
-13A PULSE DURATION 80µs
NORMALIZED DRAIN SOURCE ON-RESISTANCE
-13A
rDS(on), DRAIN SOURCE
-10V
DUTY CYCLE 0.5%MAX
ON-RESISTANCE
150oC
25oC
JUNCTION TEMPERATURE (oC)
-VGS, GATE SOURCE VOLTAGE
Figure Normalized Resistance Junction Temperature
-ID, DRAIN CURRENT
25oC -55oC 150oC
Figure On-Resistance Gate Source Voltage
PULSE DURATION 80µs DUTY CYCLE 0.5%MAX
-IS, REVERSE DRAIN CURRENT
0.01 1E-3
150oC 25oC -55oC
-VGS, GATE SOURCE VOLTAGE
-VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics
Figure Source Drain Diode Forward Voltage Source Current
FDS6679AZ Rev.
www.fairchildsemi.com
FDS6679AZ P-Channel PowerTrench® MOSFET
Typical Characteristics 25°C unless otherwise noted
-VGS, GATE SOURCE VOLTAGE(V)
-10V -15V -20V
10000
Ciss Coss
CAPACITANCE (pF)
1000
Crss
1MHz
GATE CHARGE(nC)
-VDS, DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics
1000
-Ig(uA)
150oC
Figure Capacitance Drain Source Voltage
-IAS, AVALANCHE CURRENT(A)
25oC
0.01 1E-3 1E-4 -VGS(V)
25oC
125oC
tAV, TIME AVALANCHE(ms)
Figure
Figure Unclamped Inductive Switching Capability
-ID, DRAIN CURRENT
-10V
-ID, DRAIN CURRENT
THIS AREA LIMITED rDS(on)
-4.5V
SINGLE PULSE RATED oC/W
AMBIENT TEMPERATURE (oC)
0.01 0.01
-VDS, DRAIN SOURCE VOLTAGE
Figure Maximum Continuous Drain Current Ambient Temperature
Figure Forward Bias Safe Operating Area
FDS6679AZ Rev.
www.fairchildsemi.com
FDS6679AZ P-Channel PowerTrench® MOSFET
Typical Characteristics 25°C unless otherwise noted
P(PK), PEAK TRANSIENT POWER
SINGLE PULSE oC/W
PULSE WIDTH (sec)
Figure Junction-to-Case Transient Thermal Response Curve
NORMALIZED THERMAL IMPEDANCE,
DUTY CYCLE-DESCENDING ORDER
0.05 0.02 0.01 SINGLE PULSE
0.01
NOTES: DUTY FACTOR: t1/t2 PEAK
1E-3
RECTANGULAR PULSE DURATION (sec)
Figure Junction-to-Ambient Transient Thermal Response Curve
FDS6679AZ Rev.
www.fairchildsemi.com
FDS6679AZ P-Channel PowerTrench® MOSFET
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Rev.
FDS6679AZ Rev.
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FDS6679AZ P-Channel PowerTrench® MOSFET -30V, -13A, General Descr

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