FDS6676AS N-Channel PowerTrench® SyncFETGeneral Description

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FDS6676AS N-Channel PowerTrench® SyncFETGeneral Description

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FDS6676AS N-Channel PowerTrench® SyncFET
FDS6676AS
N-Channel PowerTrench® SyncFETGeneral Description
FDS6676AS designed replace single SO-8 MOSFET Schottky diode synchronous DC:DC power supplies. This MOSFET designed maximize power conversion efficiency, providing RDS(ON) gate charge. FDS6676AS includes integrated Schottky diode using Fairchild's monolithic SyncFET technology.
Features
14.5 RDS(ON) max= RDS(ON) max= 7.25 Includes SyncFET Schottky body diode gate charge (45nC typical) High performance trench technology extremely RDS(ON) fast switching High power current handling capability RoHS Compliant
Applications
DC/DC converter side notebook
SO-8
Absolute Maximum Ratings
Symbol
VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
(Note
Units
14.5 +150
Power Dissipation Single Operation
(Note (Note (Note
TSTG
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W
Package Marking Ordering Information
Device Marking FDS6676AS Device FDS6676AS Reel Size 13'' Tape width 12mm Quantity 2500 units
©2008 Fairchild Semiconductor Corporation
FDS6676AS
FDS6676AS N-Channel PowerTrench® SyncFET
Electrical Characteristics
Symbol
BVDSS BVDSS IDSS IGSS
25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note
Test Conditions
Units
Characteristics
Referenced 25°C ±100 mV/°C
Characteristics
VGS(th) VGS(th) RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VGS,
Referenced 25°C 14.5 13.2 VGS=10 =14.5A, TJ=125°C 14.5
mV/°C
7.25
ID(on)
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note
2510
Switching Characteristics
td(on) td(off) td(on) td(off) Qg(TOT) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
RGEN
RGEN
Total Gate Charge Vgs=10V Total Gate Charge Vgs=5V Gate-Source Charge Gate-Drain Charge 14.5
FDS6676AS
FDS6676AS N-Channel PowerTrench® SyncFET
Electrical Characteristics
Symbol
25°C unless otherwise noted
Parameter
Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Current Diode Reverse Recovery Charge
Test Conditions
14.5A, diF/dt A/µs
Units
Drain-Source Diode Characteristics Maximum Ratings
(Note (Note
(Note
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
50°/W when mounted copper
105°/W when mounted copper
FDS6676AS
FDS6676AS N-Channel PowerTrench® SyncFET
Typical Characteristics
3.5V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
3.5V 3.0V
DRAIN CURRENT
6.0V 4.5V 3.0V
4.0V 4.5V 6.0V
2.5V
0.25 0.75 VDS, DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.016
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
RDS(ON), ON-RESISTANCE (OHM)
14.5A =10V
0.014
0.012
0.01
0.008
0.006
25oC
JUNCTION TEMPERATURE
0.004 VGS, GATE SOURCE VOLTAGE
Figure On-Resistance Variation with Temperature.
REVERSE DRAIN CURRENT
Figure On-Resistance Variation with Gate-to-Source Voltage.
DRAIN CURRENT
125oC
-55oC
25oC
-55oC
0.01
VGS, GATE SOURCE VOLTAGE
0.001 VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS6676AS
FDS6676AS N-Channel PowerTrench® SyncFET
Typical Characteristics (continued)
VGS, GATE-SOURCE VOLTAGE
14.5A
3500 3000
1MHz
CAPACITANCE (pF)
2500
Ciss
2000 1500
Coss
1000
Crss
GATE CHARGE (nC)
VDS, DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics.
RDS(ON) LIMIT 100us 10ms 100ms
P(pk), PEAK TRANSIENT POWER
Figure Capacitance Characteristics.
DRAIN CURRENT
SINGLE PULSE 125°C/W 25°C
SINGLE PULSE
0.01 0.01
VDS, DRAIN-SOURCE VOLTAGE
0.001
0.01
TIME (sec)
1000
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
RJC(t) r(t) °C/W
0.05 0.02
P(pk
0.01
0.01
RJC(t) Duty Cycle,
SINGLE PULSE
0.001 0.0001
0.001
0.01
TIME (sec)
1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
FDS6676AS
FDS6676AS N-Channel PowerTrench® SyncFET
Typical Characteristics (continued)
SyncFET Schottky Body Diode Characteristics
Fairchild's SyncFET process embeds Schottky diode parallel with PowerTrench MOSFET. This diode exhibits similar characteristics discrete external Schottky diode parallel with MOSFET. Figure shows reverse recovery characteristic FDS6676AS. Schottky barrier diodes exhibit significant leakage high temperature high reverse voltage. This will increase power device.
IDSS, REVERSE LEAKAGE CURRENT
125oC
0.01
0.8A/DIV
0.001
100oC
0.0001
25oC
0.00001 VDS, REVERSE VOLTAGE
10nS/DIV
Figure FDS6676AS SyncFET body diode reverse recovery characteristic.
comparison purposes, Figure shows reverse recovery characteristics body diode equivalent size MOSFET produced without SyncFET (FDS6676).
Figure SyncFET body diode reverse leakage versus drain-source voltage temperature.
0.8A/DIV
10nS/DIV
Figure Non-SyncFET (FDS6676) body diode reverse recovery characteristic.
FDS6676AS
FDS6676AS N-Channel PowerTrench® SyncFET
Typical Characteristics
0.01
BVDSS
vary obtain required peak
Figure Unclamped Inductive Load Test Circuit
Same type
Figure Unclamped Inductive Waveforms
Ig(REF Charge, (nC) Figure Gate Charge Test Circuit Figure Gate Charge Waveform RGEN VGSPulse Width
QG(TOT)
td(ON)
tOFF td(OFF
Duty Cycle 0.1%
Pulse Width
Figure Switching Time Test Circuit
Figure Switching Time Waveforms
FDS6676AS
TRADEMARKS
following includes registered unregistered trademarks service marks, owned Fairchild Semiconductor and/or global subsidianries, intended exhaustive list such trademarks. ACEx® Build Transfer LogicEcoSPARK® EfficentMaxEZSWITCH*
Fairchild® Fairchild Semiconductor® FACT Quiet SeriesFACT® FAST® FastvCoreFlashWriter®
FPSF-PFSFRFET® Global Power ResourceSM Green FPSGreen OPTOPLANAR®
PDP-SPMPower-SPMPowerTrench® Programmable Active DroopQFET® QSQuiet SeriesRapidConfigureSaving world timeSmartMaxSMART STARTSPM® STEALTHSuperFETSuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SuperMOS®
Power Franchise®
TinyBoostTinyBuckTinyLogic® Ultra FRFETUniFETVCXVisualMax
EZSWITCHand FlashWriter® trademarks System General Corporation, used under license Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION, DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. THESE SPECIFICATIONS EXPAND TERMS FAIRCHILD'S WORLDWIDE TERMS CONDITIONS, SPECIFICALLY WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices systems which, intended surgical implant into body support sustain life, whose failure perform when properly used accordance with instructions provided labeling, reasonably expected result significant injury user. critical component component life support, device, system whose failure perform reasonably expected cause failure life support device system, affect safety effectiveness.
PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data; supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice improve design. This datasheet contains specifications product that discontinued Fairchild Semiconductor. datasheet reference information only.
Rev.
Preliminary
First Production
Identification Needed Obsolete
Full Production Production
FDS6676AS Rev.B2

FDS6676AS N-Channel PowerTrench® SyncFETGeneral Description

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