FDS6574A N-Channel PowerTrench® MOSFET General Description

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FDS6574A N-Channel PowerTrench® MOSFET General Description

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FDS6574A
FDS6574A
N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET been designed specifically improve overall efficiency DC/DC converters using either synchronous conventional switching controllers. been optimized gate charge, RDS(ON) fast switching speed.
Features
RDS(ON) RDS(ON) RDS(ON)
gate charge High performance trench technology extremely RDS(ON) High power current handling capability
Applications
DC/DC converter
RoHS Compliant
SO-8
Absolute Maximum Ratings
Symbol
VDSS VGSS Gate-Source Voltage Drain Current Continuous Pulsed Drain-Source Voltage
TA=25oC unless otherwise noted
Parameter
Ratings
(Note
Units
+175
Power Dissipation Single Operation
(Note (Note (Note
TSTG
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
Package Marking Ordering Information
Device Marking FDS6574A Device FDS6574A Reel Size 13'' Tape width 12mm Quantity 2500 units
©2008 Fairchild Semiconductor Corporation
FDS6574A B2(W)
FDS6574A
Electrical Characteristics
Symbol
BVDSS BVDSS IDSS IGSSF IGSSR VGS(th) VGS(th) RDS(on)
25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note
Test Conditions
Units
Characteristics
Referenced 25°C VGS, -2.7 7657 1432 RGEN 19.5
(Note
-100
mV/°C mV/°C
Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note
Referenced 25°C A,TJ=125°C 10V,
ID(on) Ciss Coss Crss td(on) td(off)
Dynamic Characteristics
Switching Characteristics
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage 0.56
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
50°C/W when mounted 1in2 copper
105°C/W when mounted copper
125°C/W when mounted minimum pad.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
FDS6574A B2(W)
FDS6574A
Typical Characteristics
4.5V 3.5V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
2.5V 1.8V 1.5V
DRAIN CURRENT
1.5V
1.8V
DIRAIN CURRENT
2.5V
3.0V
3.5V
4.5V
VDS, DRAIN SOURCE VOLTAGE
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.012 RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
4.5V
0.01
0.008
125oC
0.006
0.004
25oC
0.002
JUNCTION TEMPERATURE
VGS, GATE SOURCE VOLTAGE
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Gate-to-Source Voltage.
REVERSE DRAIN CURRENT
DRAIN CURRENT
-55oC 125oC
25oC
0.01 0.001 0.0001 125oC 25oC -55oC
VGS, GATE SOURCE VOLTAGE
VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS6574A B2(W)
FDS6574A
Typical Characteristics
VGS, GATE-SOURCE VOLTAGE
10000 8000 CAPACITANCE (pF) CISS
6000
4000 COSS 2000 CRSS
GATE CHARGE (nC)
VDS, DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics.
1000
P(pk), PEAK TRANSIENT POWER
Figure Capacitance Characteristics.
DRAIN CURRENT
RDS(ON) LIMIT
100µs 10ms 100ms
SINGLE PULSE 125°C/W 25°C
4.5V SINGLE PULSE 125oC/W 25oC
0.01 0.01
0.001
0.01
VDS, DRAIN-SOURCE VOLTAGE
TIME (sec)
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
JA(t) r(t) P(pk) JA(t) Duty Cycle,
0.05 0.02 0.01
0.01
SINGLE PULSE
0.001 0.0001 0.001 0.01 TIME (sec) 1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
FDS6574A B2(W)
TRADEMARKS
following includes registered unregistered trademarks service marks, owned Fairchild Semiconductor and/or global subsidianries, intended exhaustive list such trademarks. ACEx® Build Transfer LogicEcoSPARK® EfficentMaxEZSWITCH*
Fairchild® Fairchild Semiconductor® FACT Quiet SeriesFACT® FAST® FastvCoreFlashWriter®
FPSF-PFSFRFET® Global Power ResourceSM Green FPSGreen OPTOPLANAR®
PDP-SPMPower-SPMPowerTrench® Programmable Active DroopQFET® QSQuiet SeriesRapidConfigureSaving world timeSmartMaxSMART STARTSPM® STEALTHSuperFETSuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SuperMOS®
Power Franchise®
TinyBoostTinyBuckTinyLogic® Ultra FRFETUniFETVCXVisualMax
EZSWITCHand FlashWriter® trademarks System General Corporation, used under license Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION, DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. THESE SPECIFICATIONS EXPAND TERMS FAIRCHILD'S WORLDWIDE TERMS CONDITIONS, SPECIFICALLY WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices systems which, intended surgical implant into body support sustain life, whose failure perform when properly used accordance with instructions provided labeling, reasonably expected result significant injury user. critical component component life support, device, system whose failure perform reasonably expected cause failure life support device system, affect safety effectiveness.
PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data; supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice improve design. This datasheet contains specifications product that discontinued Fairchild Semiconductor. datasheet reference information only.
Rev.
FDS6574A B2(W)
Preliminary
First Production
Identification Needed Obsolete
Full Production Production

FDS6574A N-Channel PowerTrench® MOSFET General Description

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