FDMC8884 N-Channel Power Trench 30V, 15A, Features

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FDMC8884 N-Channel Power Trench 30V, 15A, Features

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FDMC8884 N-Channel Power Trench® MOSFET
FDMC8884
N-Channel Power Trench
30V, 15A,
Features
rDS(on) 10V, 9.0A rDS(on) 4.5V, 7.2A High performance trchnology extremely rDS(on) Termination Lead-free RoHS Compliant
MOSFET
General Description
This N-Channel MOSFET produced using Fairchild Semiconductor's advanced Power Trench® process that been especially tailored minimize on-state resistance. This device well suited Power Management load switching applications common Notebook Computers Portable Battery Packs.
Application
High side Buck Converters Notebook battery power management Load switch Notebook
Bottom
Power
MOSFET Maximum Ratings 25°C unless otherwise noted
Symbol Parameter Drain Source Voltage Gate Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating Storage Junction Temperature Range 25°C 25°C (Note (Note 25°C 25°C 25°C (Note Ratings +150 Units
Thermal Characteristics
Thermal Resistance, Junction Case Thermal Resistance, Junction Ambient (Note °C/W
Package Marking Ordering Information
Device Marking FDMC8884 Device FDMC8884 Package Power Reel Size 13'' Tape Width 12mm Quantity 3000 units
©2008 Fairchild Semiconductor Corporation FDMC8884 Rev.C
www.fairchildsemi.com
FDMC8884 N-Channel Power Trench® MOSFET
Electrical Characteristics 25°C unless otherwise noted
Symbol Parameter Test Conditions Units
Characteristics
BVDSS BVDSS IDSS IGSS Drain Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate Source Leakage Current 250µA, 250µA, referenced 25°C 24V, 125°C ±20V, ±100 mV/°C
Characteristics
VGS(th) VGS(th) rDS(on) Gate Source Threshold Voltage Gate Source Threshold Voltage Temperature Coefficient Static Drain Source Resistance Forward Transconductance VDS, 250µA 250µA, referenced 25°C 10V, 9.0A 4.5V, 7.2A 10V, 9.0A, 125°C 9.0A mV/°C
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 15V, 1MHz 1MHz
Switching Characteristics
td(on) td(off) Qg(TOT) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Total Gate Charge Gate Drain "Miller" Charge 4.5V 9.0A 15V, 9.0A, 10V, RGEN
Drain-Source Diode Characteristics
Source Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 9.0A 1.6A 9.0A, di/dt 100A/µs (Note (Note 0.86 0.76
NOTES: determined with device mounted 1in2 copper board FR-4 material. guaranteed design while determined user's board design.
53°C/W when mounted copper
125°C/W when mounted minimum copper
Pulse Test: Pulse Width 300µs, Duty cycle 2.0%. Starting 25oC; N-ch: 1mH, 30V, 10V.
FDMC8884 Rev.C
www.fairchildsemi.com
FDMC8884 N-Channel Power Trench® MOSFET
Typical Characteristics 25°C unless otherwise noted
4.5V DRAIN CURRENT NORMALIZED DRAIN SOURCE ON-RESISTANCE
3.5V PULSE DURATION 80µs DUTY CYCLE 0.5%MAX
4.5V
PULSE DURATION 80µs DUTY CYCLE 0.5%MAX
3.5V
DRAIN CURRENT(A)
VDS, DRAIN SOURCE VOLTAGE
Figure On-Region Characteristics
Figure Normalized On-Resistance Drain Current Gate Voltage
SOURCE ON-RESISTANCE PULSE DURATION 80µs DUTY CYCLE 0.5%MAX
NORMALIZED DRAIN SOURCE ON-RESISTANCE
9.0A
9.0A
rDS(on), DRAIN
125oC
25oC
JUNCTION TEMPERATURE (oC)
VGS, GATE SOURCE VOLTAGE
Figure Normalized Resistance Junction Temperature
REVERSE DRAIN CURRENT PULSE DURATION 80µs DUTY CYCLE 0.5%MAX
Figure On-Resistance Gate Source Voltage
DRAIN CURRENT
150oC 25oC
150oC 25oC
-55oC
-55oC
0.01
VGS, GATE SOURCE VOLTAGE
0.001
VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics
Figure Source Drain Diode Forward Voltage Source Current
FDMC8884 Rev.C
www.fairchildsemi.com
FDMC8884 N-Channel Power Trench® MOSFET
Typical Characteristics 25°C unless otherwise noted
VGS, GATE SOURCE VOLTAGE(V) 9.0A
1000
CAPACITANCE (pF)
Ciss
GATE CHARGE(nC)
Coss
1MHz
Crss
VDS, DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics
Figure Capacitance Drain Source Voltage
DRAIN CURRENT
IAS, AVALANCHE CURRENT(A)
25oC
Limited Package
100oC 125oC
4.5V
0.01
tAV, TIME AVALANCHE(ms)
CASE TEMPERATURE
Figure Unclamped Inductive Switching Capability
P(PK), PEAK TRANSIENT POWER
Figure Maximum Continuous Drain Current Case Temperature
SINGLE PULSE 125oC/W 25oC
DRAIN CURRENT
100µs
THIS AREA LIMITED rDS(on)
10ms 100ms
SINGLE PULSE RATED 25oC
0.01 0.01
1000
VDS, DRAIN SOURCE VOLTAGE
PULSE WIDTH
Figure Forward Bias Safe Operating Area
Figure Single Pulse Maximum Power Dissipation
FDMC8884 Rev.C
www.fairchildsemi.com
FDMC8884 N-Channel Power Trench® MOSFET
Typical Characteristics 25°C unless otherwise noted
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL IMPEDANCE,
0.05 0.02 0.01
SINGLE PULSE
NOTES: DUTY FACTOR: t1/t2 PEAK
0.01
1000
RECTANGULAR PULSE DURATION
Figure Transient Thermal Response Curve
FDMC8884 Rev.C
www.fairchildsemi.com
FDMC8884 N-Channel Power Trench® MOSFET
Dimensional Outline Layout
FDMC8884 Rev.C
www.fairchildsemi.com
FDMC8884 N-Channel Power Trench® MOSFET
TRADEMARKS
following includes registered unregistered trademarks service marks, owned Fairchild Semiconductor and/or global subsidianries, intended exhaustive list such trademarks. ACEx® Build Transfer LogicEcoSPARK® EfficentMaxEZSWITCH*
Fairchild® Fairchild Semiconductor® FACT Quiet SeriesFACT® FAST® FastvCoreFlashWriter®
FPSF-PFSFRFET® Global Power ResourceSM Green FPSGreen OPTOPLANAR®
PDP-SPMPower-SPMPowerTrench® Programmable Active DroopQFET® QSQuiet SeriesRapidConfigureSaving world timeSmartMaxSMART STARTSPM® STEALTHSuperFETSuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SuperMOS®
Power Franchise®
TinyBoostTinyBuckTinyLogic®
UHC® Ultra FRFETUniFETVCXVisualMax
EZSWITCHand FlashWriter® trademarks System General Corporation, used under license Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION, DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. THESE SPECIFICATIONS EXPAND TERMS FAIRCHILD'S WORLDWIDE TERMS CONDITIONS, SPECIFICALLY WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices systems which, intended surgical implant into body support sustain life, whose failure perform when properly used accordance with instructions provided labeling, reasonably expected result significant injury user. critical component component life support, device, system whose failure perform reasonably expected cause failure life support device system, affect safety effectiveness.
PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data; supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice improve design. This datasheet contains specifications product that discontinued Fairchild Semiconductor. datasheet reference information only.
Rev.
Preliminary
First Production
Identification Needed Obsolete
Full Production Production
FDMC8884 Rev.C
www.fairchildsemi.com

FDMC8884 N-Channel Power Trench 30V, 15A, Features

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