High efficiency dual Schottky rectifier suited switch mode power suppl

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High efficiency dual Schottky rectifier suited switch mode power suppl

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Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER General Description
High efficiency dual Schottky rectifier suited switch mode power supplies other power converters. This device intended medium voltage operation, particularly, high frequency circuits where switching losses noise required. MBR2045C available TO-220-3 TO-220F-3 packages.
MBR2045C
IF(AV) VRRM VF(max) 2*10A 150oC 0.57V
Features
Forward Voltage: 0.57V @125oC Power Loss/High Efficiency 150oC Operating Junction Temperature Total (10A Each Diode Leg) Guard-Ring Stress Protection High Surge Capacity Pb-Free Package
Mechanical Characteristics
Case: Epoxy, Molded Epoxy Meets 0.125 Weight (Approximately): Grams (TO-220-3, TO-220F-3) Finish: External Surfaces Corrosion Resistant Terminal Leads Readily Solderable Lead Temperature Soldering Purposes: 260oC Maximumfor Seconds
Applications
Power Supply Output Rectification Power Management Instrumentation
TO-220-3
TO-220F-3
Figure Package Types MBR2045C
Jul. 2008 Rev.
Semiconductor Manufacturing Limited
Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER Configuration
T/TFPackage (TO-220-3/TO-220F-3)
MBR2045C
(Front View)
Figure Configuration MBR2045C
Figure Internal Structure MBR2045C
Ordering Information
MBR2045C Circuit Type Package TO-220-3 TO-220F-3 Lead Free Blank: Tube
Package TO-220-3 TO-220F-3
Part Number MBR2045CT-E1 MBR2045CTF-E1
Marking MBR2045CT-E1 MBR2045CTF-E1
Packing Type Tube Tube
Semiconductor's Pb-free products, designated with "E1" suffix part number, RoHS compliant.
Jul. 2008 Rev.
Semiconductor Manufacturing Limited
Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER Absolute Maximum Ratings (Each Diode Leg) (Note
Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage Blocking Voltage Average Rectified Forward Current (Rated TC=139oC Symbol VRRM VRWM IF(AV) IFRM IFSM IRRM TSTG dv/dt Value Unit
MBR2045C
10000 >400 >8000
Peak Repetitive Forward Current (Rated Square Wave, kHz) TC=137oC Repetitive Peak Surge Current (Surge applied rated load conditions half wave, single phase, Peak Repetitive Reverse Surge Current (2.0µs, 1.0kHz)
Operating Junction Temperature (Note Storage Temperature Range Voltage Rate Change (Rated (Machine Model=C) (Human Body Model=3B)
V/µs
Note Stresses greater than those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated under "Recommended Operating Conditions" implied. Exposure "Absolute Maximum Ratings" extended periods affect device reliability. Note heat generated must less than thermal conductivity from Junction Ambient: dPD/dTJ 1/RJA.
Thermal Characteristics
Parameter Symbol Condition Junction Case Junction Ambient TO-220-3 TO-220F-3 TO-220-3 Value
oC/W
Unit
Maximum Thermal Resistance
Jul. 2008 Rev.
Semiconductor Manufacturing Limited
Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER Electrical Characteristics (Each Diode Leg)
Parameter Condition IF=10 TC=25oC Maximum Instantaneous Forward IF=10 TC=125oC Voltage Drop (Note IF=20 TC=25oC IF=20 TC=125oC Maximum Instantaneous Reverse Current (Note Rated Voltage, TC=125oC Rated Voltage, TC=25oC 0.01 Symbol 0.59 0.50 0.71 0.67 0.65 0.57 0.84 0.72 Unit
MBR2045C
Note Pulse Test: Pulse Width=300µs, Duty Cycle2.0%.
Jul. 2008 Rev.
Semiconductor Manufacturing Limited
Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER Typical Performance Characteristics
MBR2045C
Instantaneous Forward Current
Instantaneous Forward Voltage
Figure Typical Forward Voltage
Reverse Current (mA)
0.01 1E-3 1E-4 1E-5 1E-6 1E-7
Reverse Voltage
Figure Typical Reverse Current
Jul. 2008 Rev.
Semiconductor Manufacturing Limited
Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER Typical Performance Characteristics (Continued) MBR2045C
1000
Capacitance (pF)
TJ=25
Reverse Voltage
Figure Capacitance
IF(AV), Average Foward Current
Square
Case Temperature
Figure Average Forward Current Case Temperature (Square, Each Diode)
Jul. 2008 Rev.
Semiconductor Manufacturing Limited
Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER Mechanical Dimensions TO-220-3 Unit: mm(inch) MBR2045C
9.660(0.380) 10.660(0.420) 3.560(0.140) 4.060(0.160)
2.580(0.102) 3.380(0.133)
0.550(0.022) 1.350(0.053)
1.850(0.073)
0.200(0.008)
14.230(0.560) 16.510(0.650)
1.500(0.059)
8.520(0.335) 9.520(0.375)
27.880(1.098) 30.280(1.192)
3.560(0.140) 4.820(0.190) 2.080(0.082) 2.880(0.113)
1.160(0.046) 1.760(0.069) 0.813(0.032)
0.381(0.015)
8.763(0.345)
0.381(0.015) 2.540(0.100) 2.540(0.100)
0.356(0.014) 0.406(0.016)
Jul. 2008 Rev.
Semiconductor Manufacturing Limited
Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER Mechanical Dimensions (Continued) TO-220F-3 Unit: mm(inch) MBR2045C
9.800(0.385) 10.200(0.401) 3.100(0.122) 3.300(0.130)
4.400(0.173) 4.700(0.185) 2.700(0.106) 3.000(0.118)
3.400(0.134) 3.600(0.142) 7.000(0.275) 7.400(0.291)
15.800(0.621) 16.200(0.637)
2.700(0.106) 3.100(0.122) 2.000(0.079) 2.800(0.110) 13.000(0.511) 13.600(0.535) 1.200(0.047) 0.900(0.035) 1.200(0.047) 0.650(0.026) 0.850(0.033) 2.550(0.100) 2.550(0.100) 1.500(0.059)
0.600(0.024) 0.800(0.031)
Jul. 2008 Rev.
Semiconductor Manufacturing Limited
Semiconductor Manufacturing Limited
http://www.bcdsemi.com
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High efficiency dual Schottky rectifier suited switch mode power suppl

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