APT13003E series high voltage, high speed switching Power transistors
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HIGH VOLTAGE FAST SWITCHING POWER TRANSISTOR APT13003E
APT13003E series high voltage, high speed switching Power transistors specially designed off-line switch mode power supplies with output power. APT13003E series available TO-92 TO126 packages.
Features
High Switching Speed High Collector-Emitter Voltage Cost Bulk Ammo Packing TO-92 Package TO-126 Package
Applications
Battery Chargers Mobile Phone Solution Power Supply DVD/STB Solution
TO-92 (Bulk Packing)
TO-92 (Ammo Packing)
Figure Package Types APT13003E
TO-126
Configuration
Package TO-92
Base Collector Emitter Emitter Collector Base
Package TO-126
(Top View)
(Front View)
Figure Configurations APT13003E
2008 Rev.
Semiconductor Manufacturing Limited
HIGH VOLTAGE FAST SWITCHING POWER TRANSISTOR APT13003E
Ordering Information
APT13003 Circuit Type Lead Free Ammo Blank: Bulk Package TO-92 TO-126
APT13003E
Package TO-92 TO-126
Part Number APT13003EZ-E1 APT13003EZTR-E1 APT13003EU-E1
Marking 13003EZ-E1 13003EZ-E1 EU13003E
Packing Type Bulk Ammo Bulk
Semiconductor's Pb-free products, designated with "E1" suffix part number, RoHS compliant.
Absolute Maximum Ratings (Note
Parameter Collector-Emitter Voltage (VBE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage (IC=0) Collector Current Collector Peak Current (Pulse) (Note Base Current Base Peak Current (Pulse) (Note Power Dissipation, TA=25oC Power Dissipation, TC=25oC Operating Junction Temperature Storage Temperature Range TO-92 TO-126 Symbol VCES VCEO VEBO PTOT PTOT TSTG Value 0.75 Unit
Note Stresses greater than those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated under "Recommended Operating Conditions" implied. Exposure "Absolute Maximum Ratings" extended periods affect device reliability. Note Pulse test Pulse Width 5ms, Duty Cycle 10%.
2008 Rev.
Semiconductor Manufacturing Limited
HIGH VOLTAGE FAST SWITCHING POWER TRANSISTOR APT13003E
Thermal Characteristics
Parameter Thermal Resistance (Junction-to-Case) TO-92 TO-126 TO-92 Thermal Resistance (Junction-to-Ambient) TO-126 Symbol Value 83.3 6.25 113.6
oC/W
Unit
oC/W
Electrical Characteristics
TC=25oC, unless otherwise specified.)
Parameter Collector Cut-off Current (VBE=-1.5V) Collector-Emitter Sustaining Voltage (IB=0) Collector-Emitter Saturation Voltage (Note Base-Emitter Saturation Voltage (Note Symbol ICEV VCEO (sus) (sat) (sat) Conditions VCE=700V IC=100A IC=0.5A, IB=0.1A IC=1.0A, IB=0.25A IC=0.5A, IB=0.1A IC=1.0A, IB=0.25A IC=0.3A, VCE=2V Current Gain (Note IC=0.5A, VCE=2V IC=1.0A, VCE=2V Output Capacitance Current Gain Bandwidth Product Turn-on Time with Resistive Load Storage Time with Resistive Load Fall Time with Resistive Load IC=1A, VCC=125V, IB1=0.2A, IB2=-0.2A, TP=25S VCB=10V, f=0.1MHZ VCE=10V, IC=0.1A 0.28 0.17 0.29 Unit
Note Pulse test Pulse Width 300s, Duty Cycle
2008 Rev.
Semiconductor Manufacturing Limited
HIGH VOLTAGE FAST SWITCHING POWER TRANSISTOR APT13003E
Typical Performance Characteristics
Collector Current
Collector Current
0.01
1E-3 1000
0.01 1000
Collector-Emitter Clamp Voltage
Collector-Emitter Clamp Voltage
Figure Safe Operating Areas (TO-92 Package)
Figure Safe Operating Areas (TO-126 Package)
2.00 1.75
IB=400mA IB=300mA IB=250mA IB=200mA IB=150mA IB=100mA IB=50mA
Power Derating Factor
Collector Current
1.50 1.25 1.00 0.75 0.50 0.25
0.00
Case Temperature
Collector-Emitter Voltage
Figure Power Derating Curve
Figure Static Characteristics
2008 Rev.
Semiconductor Manufacturing Limited
HIGH VOLTAGE FAST SWITCHING POWER TRANSISTOR APT13003E
Typical Performance Characteristics (Continued)
TA=125
VCE=5V VCE=1V
Collector-Emitter Voltage
Current Gain
TA=25
0.01
TJ=125
TJ=25
hFE=5
0.01
Collector Current
Collector Current
Figure Current Gain
Figure Collector-Emitter Saturation Voltage
VCE=2V, IC=0.5A
Base-Emitter Voltage
TJ=25
TJ=125
hFE=5
Collector Current
Case Temperature
Figure Base-Emitter Saturation Voltage
Figure Case Temperature
2008 Rev.
Semiconductor Manufacturing Limited
HIGH VOLTAGE FAST SWITCHING POWER TRANSISTOR APT13003E
Mechanical Dimensions TO-92 (Bulk Packing) Unit: mm(inch)
1.100(0.043) 1.400(0.055) 3.430(0.135) 0.360(0.014) 0.510(0.020)
3.300(0.130)
3.700(0.146)
0.000(0.000) 0.380(0.015) 1.600(0.063) 4.400(0.173) 4.700(0.185)
4.300(0.169)
4.700(0.185)
0.380(0.015) 0.550(0.022)
1.270(0.050)
2.440(0.096) 2.640(0.104)
2008 Rev.
14.100(0.555) 14.500(0.571)
Semiconductor Manufacturing Limited
HIGH VOLTAGE FAST SWITCHING POWER TRANSISTOR APT13003E
Mechanical Dimensions (Continued) TO-92 (Ammo Packing) Unit: mm(inch)
4.400(0.173) 4.700(0.185)
4.300(0.169)
1.100(0.043) 1.400(0.055) 3.430(0.135) 0.360(0.014) 0.510(0.020)
4.700(0.185)
1.270(0.050)
3.300(0.130)
3.700(0.146)
4.500(0.177) 5.500(0.217)
13.000(0.512)
0.000(0.000) 0.380(0.015)
1.600(0.063)
14.000(0.551)
0.380(0.015) 0.550(0.022)
2.540(0.100)
2008 Rev.
Semiconductor Manufacturing Limited
HIGH VOLTAGE FAST SWITCHING POWER TRANSISTOR APT13003E
Mechanical Dimensions (Continued) TO-126 Unit: mm(inch)
7.400(0.291) 7.800(0.307)
3.900(0.154) 4.100(0.161)
10.600(0.417) 11.000(0.433)
3.000(0.118) 3.200(0.126) 1.170(0.046) 1.370(0.054) 0.660(0.026) 2.100(0.083) 2.300(0.091) 0.860(0.034)
15.300(0.602) 15.700(0.618)
2.290(0.090)TYP 4.480(0.176) 4.680(0.184)
0.450(0.018) 0.600(0.024)
2008 Rev.
Semiconductor Manufacturing Limited
0.000(0.000) 0.300(0.012)
2.500(0.098 2.900(0.114) 1.100(0.043) 1.500(0.059)
Semiconductor Manufacturing Limited
http://www.bcdsemi.com
IMPORTANT NOTICE Semiconductor Manufacturing Limited reserves right make changes without further notice products specifications herein. Semiconductor Manufacturing Limited does assume responsibility products particular purpose, does Semiconductor Manufacturing Limited assume liability arising application products circuits. Semiconductor Manufacturing Limited does convey license under patent rights other rights rights others.
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REGIONAL SALES OFFICE Shenzhen Office REGIONAL SALES OFFICE
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