AP2126 300mA, positive Voltage regulator fabricated CMOS process. Each
|
|
|
Top Searches for this datasheet
300mA HIGH SPEED, EXTREMELY NOISE CMOS REGULATOR AP2126
AP2126 300mA, positive Voltage regulator fabricated CMOS process. Each AP2126 equipped with voltage reference, error amplifier, resistor network setting output voltage, chip enable circuit, current limit circuit OSTD (over temperature shut down) circuit prevent from over current over temperature. AP2126 features high ripple rejection, dropout voltage, noise, high output voltage accuracy, current consumption which make ideal various battery-powered apparatus. AP2126 3.3V fixed voltage version. available SOT-23-5 Package.
Features
Dropout Voltage: 170mV@300mA High Output Voltage Accuracy: High Ripple Rejection: 65dB@ f=1kHz, 45dB@ f=10kHz Standby Current: 0.1µA Quiescent Current: 60µA Typical Output Noise: 60µVrms Short Current Limit: 50mA Over Temperature Protection Compatible with Ceramic Capacitor: COUT Excellent Line/Load Regulation
Soft Start Time: 50µs
Auto Discharge Resistance: RDS(ON)=60
Applications
Datacom Notebook Computers Mother Board
SOT-23-5
Figure Package Type AP2126
Jun. 2008 Rev.
Semiconductor Manufacturing Limited
300mA HIGH SPEED, EXTREMELY NOISE CMOS REGULATOR AP2126
Configuration
Package (SOT-23-5)
Shutdown
VOUT
Figure Configuration AP2126 (Top View)
Functional Block Diagram
SHUTDOWN
UVLO Shutdown Logic
Thermal Shutdown
Foldback Current Limit
VOUT
VREF
Figure Functional Block Diagram AP2126
Jun. 2008 Rev.
Semiconductor Manufacturing Limited
300mA HIGH SPEED, EXTREMELY NOISE CMOS REGULATOR AP2126
Ordering Information
AP2126 Circuit Type Green Tape Reel Package SOT-23-5 3.3: Fixed Output 3.3V
Product AP2126
Package SOT-23-5
Temperature Range 85oC
Part Number Green AP2126K-3.3TRG1
Marking Green
Packing Type Tape Reel
Semiconductor's products, designated with "G1" suffix part number, RoHS compliant Green.
Jun. 2008 Rev.
Semiconductor Manufacturing Limited
300mA HIGH SPEED, EXTREMELY NOISE CMOS REGULATOR AP2126
Absolute Maximum Ratings (Note
Parameter Input Voltage Shutdown Input Voltage Output Current Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10sec) Thermal Resistance (Human Body Model) (Machine Model) Symbol IOUT TSTG TLEAD Value -0.3 VIN+0.3 6000 Unit
oC/W
Note Stresses greater than those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated under "Recommended Operating Conditions" implied. Exposure "Absolute Maximum Ratings" extended periods affect device reliability.
Recommended Operating Conditions
Parameter Input Voltage Operating Junction Temperature Range Symbol Unit
Jun. 2008 Rev.
Semiconductor Manufacturing Limited
300mA HIGH SPEED, EXTREMELY NOISE CMOS REGULATOR AP2126
Electrical Characteristics (Continued)
(AP2126-3.3V, CIN=1µF, COUT=1µF, Bold typeface applies over -40oCTJ85oC, unless otherwise specified.) Parameter Output Voltage Input Voltage Maximum Output Current Load Regulation Line Regulation Dropout Voltage Quiescent Current Standby Current Symbol VOUT IOUT(MAX) VOUT /(IOUT*VOUT) VOUT /(VIN*VOUT) VDROP ISTD VIN-VOUT=1V, 1mAIOUT300mA VOUT+0.5VVIN6V IOUT=30mA VOUT=3.3V, IOUT=300mA VIN=VOUT+1V, IOUT=0mA VIN=VOUT+1V, VSHUTDOWN mode f=100Hz Power Supply Rejection Ratio Output Voltage Temperature Coefficient Output Current Limit Short Current Limit Soft Start Time Output Noise Shutdown "High" Voltage Shutdown "Low" Voltage VOUT Discharge MOSFET RDS(ON) Shutdown Pull Down Resistance Thermal Shutdown Thermal Shutdown Hysteresis PSRR Ripple 1Vp-p VIN=VOUT+1V f=1KHz f=10KHz (VOUT/VOUT) ILIMIT ISHORT VNOISE TA=25oC, 10Hz f100kHz Shutdown input voltage "High" Shutdown input voltage "Low" Shutdown input voltage "Low" IOUT=30mA, -40oCTJ85oC VIN-VOUT=1V, VOUT=0.98*VOUT VOUT=0V 0.06 Conditions VIN=VOUT+1V 1mAIOUT300mA 98%* VOUT 102%* VOUT Unit
ppm/oC
±100
µVrms
Jun. 2008 Rev.
Semiconductor Manufacturing Limited
300mA HIGH SPEED, EXTREMELY NOISE CMOS REGULATOR AP2126
Typical Performance Characteristics
C=-40
C=25
Output Voltage
Dropout Voltage (mV)
C=125
TC=-40
TC=25
TC=85
VIN=4.3V
Output Current
Output Current (mA)
Figure Output Voltage Output Current
Figure Dropout Voltage Output Current, VOUT=3.3V
TC=-40 TC=25 VIN=4.3V, VOUT=3.3V
Quiescent Current (µA)
IOUT=0 VIN=4.3V, VOUT=3.3V
Quiescent Current (µA)
TC=85
Output Current (mA)
Case Temperature
Figure Quiescent Current Output Current
Figure Quiescent Current Case Temperature
Jun. 2008 Rev.
Semiconductor Manufacturing Limited
300mA HIGH SPEED, EXTREMELY NOISE CMOS REGULATOR AP2126
Typical Performance Characteristics (Continued)
3.295 3.294 3.293
IOUT=10mA CIN=COUT=1µF, VIN=4.3V
Quiescent Current (µA)
3.292
Output Voltage
3.291 3.290 3.289 3.288 3.287 3.286 3.285
TC=-40 TC=25 TC=85 IOUT=0
3.284
Input Voltage
Case Temperature
Figure Quiescent Current Input Voltage
Figure Output Voltage Case Temperature
CIN=COUT=1µF, VIN=4.3V
Short Current (mA)
Output Voltage
IOUT=0 IOUT=300mA TC=25
Case Temperature
Input Voltage
Figure Short Current Case Temperature
Figure Output Voltage Input Voltage
Jun. 2008 Rev.
Semiconductor Manufacturing Limited
300mA HIGH SPEED, EXTREMELY NOISE CMOS REGULATOR AP2126
Typical Performance Characteristics (Continued)
VOUT=3.3V heatsink
Power Dissipation
IOUT
VOUT
Case Temperature(
Figure Load Transient Figure Power Dissipation Case Temperature (Conditions: CIN=COUT=1µF, VIN=4.4V, VOUT=3.3V)
VOUT
VOUT
VShutdown
Figure Line Transient (Conditions: IOUT=30mA, CIN=COUT=1µF, VIN=4 VOUT=3.3V)
Figure Soft Start Time (Conditions: IOUT=0mA, CIN=COUT=1µF, VShutdown=0 VOUT=3.3V)
Jun. 2008 Rev.
Semiconductor Manufacturing Limited
300mA HIGH SPEED, EXTREMELY NOISE CMOS REGULATOR AP2126
Typical Performance Characteristics (Continued)
IOUT=10mA
IOUT=300mA ripple=1Vpp, COUT=1µF, VOUT=3.3V
PSRR (dB)
1000 10000 100000
Frequency (Hz)
Figure PSRR Frequency
Jun. 2008 Rev.
Semiconductor Manufacturing Limited
300mA HIGH SPEED, EXTREMELY NOISE CMOS REGULATOR AP2126
Typical Application
VOUT
VOUT
AP2126
Shutdown
COUT
VOUT=3.3V
Figure Typical Application AP2126
Jun. 2008 Rev.
Semiconductor Manufacturing Limited
300mA HIGH SPEED, EXTREMELY NOISE CMOS REGULATOR AP2126
Mechanical Dimensions SOT-23-5 Unit: mm(inch)
2.820(0.111) 3.020(0.119)
0.100(0.004) 0.200(0.008)
2.650(0.104)
2.950(0.116)
1.500(0.059) 1.700(0.067)
0.200(0.008)
0.700(0.028)
0.950(0.037)
0.300(0.012) 0.400(0.016) 1.800(0.071) 2.000(0.079)
0.300(0.012) 0.600(0.024)
1.050(0.041)
1.250(0.049)
0.000(0.000) 0.100(0.004)
1.050(0.041) 1.150(0.045)
Jun. 2008 Rev.
Semiconductor Manufacturing Limited
Semiconductor Manufacturing Limited
http://www.bcdsemi.com
IMPORTANT NOTICE IMPORTANT NOTICE Semiconductor Manufacturing Limited reserves right make changes without further notice products specifiBCD Semiconductor Manufacturing Limited reserves right make changes without further notice products specifications herein. Semiconductor Manufacturing Limited does assume responsibility products cations herein. Semiconductor Manufacturing Limited does assume responsibility products particular purpose, does Semiconductor Manufacturing Limited assume liability arising application particular purpose, does Semiconductor Manufacturing Limited assume liability arising application products circuits. Semiconductor Manufacturing Limited does convey license under patent rights products circuits. Semiconductor Manufacturing Limited does convey license under patent rights other rights rights others. other rights rights others.
MAIN SITE MAIN SITE Headquarters Semiconductor Manufacturing Limited
Wafer Semiconductor Manufacturing Limited Shanghai Design Group SIM-BCD Semiconductor Manufacturing Co., Ltd. Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 900, Shan Road, Shanghai 200233, China Zone 1491, Fax: +86-21-5450 0008 Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 Office Semiconductor Corp. Office 30920 Huntwood Ave. Hayward, Semiconductor Corporation 94544, 30920 Huntwood Ave. Hayward, 94544, U.S.A +1-510-324-2988 Fax: +1-510-324-2788 +1-510-324-2988 Fax: +1-510-324-2788
REGIONAL SALES OFFICE Shenzhen Office REGIONAL SALES OFFICE
Semiconductor Manufacturing Limited Wafer 1600, Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Limited Tel: +86-21-24162266, Fax: +86-21-24162277 800, Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
Taiwan Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office Taiwan Office (Taiwan) Company Limited Semiconductor Shenzhen Office Room SIM-BCD Semiconductor Fuzhong Road, Futian District, Shenzhen, 298-1, Guang Road,(Taiwan) Company Limited Shanghai Noble Center, No.1006,Manufacturing Co., Ltd. Shenzhen Office Semiconductor Nei-Hu District, Taipei, 518026, China Taiwan 298-1, Guang Road, Nei-Hu District, Taipei, Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Tel: +86-755-8826 Center, Tel: Taiwan Room Noble 7951 No.1006, Fuzhong Road, Futian District, Shenzhen 518026, China +886-2-2656 2808 Fax:+86-755-8826 7951 +86-755-8826 7865 Fax: +886-2-2656 28062808 Tel: Tel: +886-2-2656 Fax: +86-755-8826 7865 Fax: +886-2-2656 2806
Other recent searches
VNQ600P - VNQ600P VNQ600P Datasheet
Si8401DB - Si8401DB Si8401DB Datasheet
MS21389 - MS21389 MS21389 Datasheet
LFCN-1000D+ - LFCN-1000D+ LFCN-1000D+ Datasheet
KPPSA04-103 - KPPSA04-103 KPPSA04-103 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
