DUAL 2-INPUT NAND GATE HIGH SPEED: 3.7ns (TYP.) POWER DISSIPATION

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DUAL 2-INPUT NAND GATE HIGH SPEED: 3.7ns (TYP.) POWER DISSIPATION

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74V2G00
DUAL 2-INPUT NAND GATE
HIGH SPEED: 3.7ns (TYP.) POWER DISSIPATION: 1µA(MAX.) 25°C HIGH NOISE IMMUNITY: VNIH VNIL (MIN.) POWER DOWN PROTECTION INPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| (MIN) BALANCED PROPAGATION DELAYS: tPLH tPHL OPERATING VOLTAGE RANGE: VCC(OPR) 5.5V IMPROVED LATCH-UP IMMUNITY
SOT23-8L
ORDER CODES
PACKAGE SOT23-8L 74V2G00STR
DESCRIPTION V2G00 advanced high-speed CMOS SINGLE 2-INPUT NAND GATE fabricated with sub-micron silicon gate double-layer metal wiring C2MOS technology.
internal circuit composed stages including buffer output, which provide high noise immunity stable output. Power down protection provided inputs accepted inputs with regard supply voltage. This device used interface
CONNECTION LOGIC SYMBOLS
October 2003
74V2G00
INPUT EQUIVALENT CIRCUIT DESCRIPTION
SYMBOL NAME FUNCTION Data Input Data Input Data Output Ground (0V) Positive Supply Voltage
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Symbol Tstg Supply Voltage Input Voltage Output Voltage Input Diode Current Output Diode Current Output Current Storage Temperature Lead Temperature sec) Value -0.5 +7.0 -0.5 +7.0 -0.5 +150 Unit
IGND Ground Current
Absolute Maximum Rating those value beyond which damage device occur. Functional operation under these condition implied
RECOMMENDED OPERATING CONDITIONS
Symbol dt/dv Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise Fall Time (note (VCC 0.3V) (VCC 0.5V) Parameter Value Unit ns/V ns/V
from
74V2G00
SPECIFICATION
Test Condition Symbol Parameter Level Output Voltage Input Leakage Current Quiescent Supply Current IO=-50 IO=-50 IO=-50 IO=-4 IO=-8 IO=50 IO=50 IO=50 IO=4 IO=8 5.5V 25°C Min. 0.7VCC 0.3VCC 2.58 3.94 0.36 0.36 2.48 0.44 0.44 Typ. Max. Value 85°C Min. 0.7VCC 0.3VCC 0.55 0.55 Max. 125°C Min. 0.7VCC 0.3VCC Max. Unit
High Level Input Voltage Level Input Voltage High Level Output Voltage
ELECTRICAL CHARACTERISTICS (Input 3ns)
Test Condition Symbol Parameter 3.3(*) 3.3(*)
Voltage range 3.3V 0.3V (**) Voltage range 5.0V 0.5V
(**)
Value 25°C Min. Typ. Max. 11.4 85°C Min. Max. 13.0 125°C Min. Max. 13.0 Unit
(pF)
tPLH tPHL Propagation Delay Time
5.0(**)
CAPACITANCE CHARACTERISTICS
Test Condition Symbol Parameter Min. Input Capacitance Power Dissipation Capacitance (note 25°C Typ. Max. Value 85°C Min. Max. 125°C Min. Max. Unit
defined value IC's internal equivalent capacitance which calculated from operating current consumption without load. (Refer Test Circuit). Average current obtained following equation. ICC(opr)
74V2G00
TEST CIRCUIT
50pF equivalent (includes probe capacitance) equivalent ZOUT pulse generator (typically
WAVEFORM: PROPAGATION DELAY (f=1MHz; duty cycle)
74V2G00
SOT23-8L MECHANICAL DATA
DIM. MIN. 0.35 0.90 0.00 0.90 0.22 0.09 2.80 2.60 1.50 1.95 0.55 13.7 MAX. 1.45 0.15 1.30 0.38 0.20 3.00 3.00 1.75 MIN. 35.4 35.4 110.2 102.3 59.0 25.6 76.7 21.6 TYP. MAX. 57.1 51.2 14.9 118.1 118.1 68.8
74V2G00
Tape Reel SOT23-xL MECHANICAL DATA
DIM. MIN. 3.13 3.07 1.27 3.23 3.17 1.37 12.8 20.2 14.4 3.33 3.27 1.47 0.123 0.120 0.050 0.153 0.153 0.127 0.124 0.054 0.157 0.157 13.0 MAX. 13.2 0.504 0.795 2.362 0.567 0.131 0.128 0.0.58 0.161 0.161 0.512 MIN. TYP. MAX. 7.086 0.519 inch
74V2G00
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DUAL 2-INPUT NAND GATE HIGH SPEED: 3.7ns (TYP.) POWER DISSIPATION

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