100% Avalanche Test Fast Switching Characteristic Simple Drive Require
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AP10N60W
100% Avalanche Test Fast Switching Characteristic Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
600V 0.75
Description
AP10N60 series specially designed main switching devices universal 90~265VAC off-line AC/DC converter applications. TO-3P type provide high blocking voltage overcome voltage surge toughest power system with best combination fast switching,ruggedized design cost-effectiveness. TO-3P package widely preferred commercial-industrial applications. device suited switch mode power supplies, DC-AC converters high current high speed switching circuits.
TO-3P
Absolute Maximum Ratings
Symbol ID@TC=25 ID@TC=100 PD@TC=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
Rating
Units
Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value Unit
Data specifications subject change without notice
200803181
AP10N60W
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=150
Test Conditions VGS=0V, ID=1mA
Min.
Typ.
Max. Units 0.75 ±100
VGS=10V, ID=4A VDS=VGS, ID=250uA VDS=10V, ID=4A VDS=480V, VGS=0V VDS=480V, VGS=0V VGS=±30V ID=8A VDS=480V VGS=10V VDD=300V ID=4A RG=10,VGS=4.7V RD=75 VGS=0V VDS=15V f=1.0MHz
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2380 3800
Source-Drain Diode
Symbol Parameter Forward Voltage
Test Conditions Tj=25, IS=8A, VGS=0V IS=8A, VGS=0V, dI/dt=100A/µs
Min.
Typ.
Max. Units
Notes:
Reverse Recovery Time
Reverse Recovery Charge
1.Pulse width limited Max. junction temperature. 2.Starting Tj=25 VDD=50V L=1.0mH RG=25 IAS=10A. 3.Pulse test
THIS PRODUCT ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT BEEN QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITERIAL COMPONENT LIFE SUPPORT
DEVICE SYSTEM AUTHORIZED.
AP10N60W
6.0V Drain Current
=150
6.0V 5.0V
Drain Current
5.0V
=4.5V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=10V
Normalized BVDSS
Normalized RDS(ON)
Junction Temperature
Junction Temperature
Normalized BVDSS v.s. Junction Temperature
Normalized On-Resistance v.s. Junction Temperature
Normalized VGS(th)
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP10N60W
f=1.0MHz
10000
Gate Source Voltage
(pF) =480V
Total Gate Charge (nC)
Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
Normalized Thermal Response (Rthjc)
Duty factor=0.5
100us
0.05
0.02
Single Pulse
10ms 100ms
0.01
Single Pulse
Duty factor Peak Rthjc
0.01 1000 0.00001 0.0001 0.001 0.01
Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
td(on) td(off) Charge
Switching Time Waveform
Gate Charge Waveform
ADVANCED POWER ELECTRONICS CORP.
Package Outline TO-3P
SYMBOLS
Millimeters
4.50 0.90 1.80 1.30 0.40 1.40 19.70 14.70 15.30 4.45 17.50 3.00
4.80 1.00 2.50 -0.60 -20.00 15.00 -5.45 -3.20
5.10 1.30 3.20 2.30 0.90 2.20 20.30 15.30 16.10 6.45 20.50 3.40
1.All Dimensions Millimeters. 2.Dimension Does Include Mold Protrusions.
Part Marking Information Packing TO-3P
Part Number Package
10N60W
LOGO
YWWSSS
Date Code (YWWSSS) Last Digit Year WWWeek Sequence
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