AO4420A uses advanced trench technology provide excellent DS(ON), shoo

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AO4420A uses advanced trench technology provide excellent DS(ON), shoo

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AO4420A N-Channel Enhancement Mode Field Effect Transistor
AO4420A uses advanced trench technology provide excellent DS(ON), shoot-through immunity body diode characteristics.This device suitable synchronous switch applications. Standard Product AO4420A Pb-free (meets ROHS Sony specifications).
13.7A (VGS 10V) RDS(ON) 10.5m (VGS 10V) RDS(ON) (VGS 4.5V) Tested Rg,Ciss,Coss,Crss Tested
SOIC-8
Absolute Maximum Ratings =25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current
Maximum 13.7
Units
Avalanche Current Repetitive avalanche energy L=0.3mHB Power Dissipation TA=25°C TA=70°C
TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-AmbientA Maximum Junction-to-LeadC
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4420A
Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=12.7A Forward Transconductance VDS=5V, ID=13.7A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=13.7A TJ=125°C 12.5 0.76 3656 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.86 30.5 VGS=4.5V, VDS=15V, ID=13.7A VGS=10V, VDS=15V, RL=1.1, RGEN=3 IF=13.7A, dI/dt=100A/µs 49.8 22.5 12.5 4050 10.5 0.004 Units
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=13.7A, dI/dt=100A/µs
value measured with device mounted FR-4 board with 2oz. Copper, still environment with A=25°C. value given application depends user's specific board design. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using <300 pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with A=25°C. curve provides single pulse rating. F.The current rating based thermal resistance rating. Feb. 2007 THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4420A
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
ID(A) ID(A) =2.0V VDS(Volts) Figure On-Regions Characteristics Normalize ON-Resistance RDS(ON)(m) ID(A) Figure On-Resistance Drain Current Gate Voltage 1E+01 RDS(ON)(m) VGS(Volts) Figure On-Resistance Gate-Source Voltage ID=13.7A 1E+00 1E-01 IS(A) 125°C 1E-02 1E-03 25°C 1E-04 1E-05 VSD(Volts) Figure Body-Diode Characteristics 25°C =10V ID=13.7A Temperature (°C) Figure On-Resistance Junction Temperature VGS=4.5V VGS=10V 4.5V =2.5V 25°C VGS(Volts) Figure Transfer Characteristics 125°C VGS=5V
=4.5V
125°C
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4420A
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
VGS(Volts) Crss (nC) Figure Gate-Charge Characteristics VDS(Volts) Figure Capacitance Characteristics VDS=15V ID=13.7A Capacitance (pF) 10000 Ciss
1000 Coss
RDS(ON) limited ID(A) 10ms J(Max) =150°C =25°C
10µs 100µs Power 0.1s
0.01
1000
VDS(Volts) Figure Maximum Forward Biased Safe Operating Area (Note
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
on/T J,PK A+PDM.ZJA.RJA RJA=40°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
0.01 0.00001
0.0001
0.001
0.01
1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedence
Alpha Omega Semiconductor, Ltd.
www.aosmd.com

AO4420A uses advanced trench technology provide excellent DS(ON), shoo

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