REJ03G1234-0500 Rev.5.00 2006 on-resistance RDS(on) typ. drive cu
|
|
|
Top Searches for this datasheet
HAT1108C
REJ03G1234-0500 Rev.5.00 2006
on-resistance RDS(on) typ. drive current. gate drive devices. High density mounting
Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband
Source Drain Drain Drain Drain Gate
Absolute Maximum Ratings
25°C)
Item Symbol Ratings Drain Source voltage VDSS Gate Source voltage VGSS Drain current -1.5 Note1 Drain peak current (pulse) Body Drain diode reverse drain current -1.5 Channel dissipation PchNote Channel temperature Storage temperature Tstg +150 Notes: duty cycle When using glass epoxy board. (FR4 1.6mm), 25°C Unit
Rev.5.00, 2006 page
HAT1108C
Electrical Characteristics
25°C)
Item Drain Source breakdown voltage Gate Source breakdown voltage Gate Source leakage current Drain Source leakage current Gate Source cutoff voltage Drain Source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate Source charge Gate Drain charge Turn delay time Rise time Turn delay time Fall time Body Drain diode forward voltage Notes: Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(th) RDS(on) Ciss Coss Crss td(on) td(off) Min. -0.5 0.65 Typ. -0.85 Max. -2.0 -1.2 Unit Test Conditions ±100 -16/ Note4 -0.75A, Note4 -0.75A, -4.5 Note4 -0.75A, Note4 --1.5 -0.75 13.3 -1.5
Rev.5.00, 2006 page
HAT1108C
Main Characteristics
Power Temperature Derating
Test condition. When using glass epoxy board. (FR4 -100
Maximum Safe Operation Area
When using board. shot pulse, 25°C
Power Dissipation
Drain Current
-0.3 -0.1 -0.03
Operation this area limited RDS(on)
-0.01 -0.03 -0.1 -0.3
-100
Ambient Temperature (°C)
Drain Source Voltage
Typical Output Characteristics
-5.5 -4.5 -3.5 Pulse Test
Typical Transfer Characteristics
Pulse Test
Drain Current
Drain Current
25°C -25°C 75°C
Drain Source Voltage Drain Source Saturation Voltage Gate Source Voltage
Pulse Test
-600
Gate Source Voltage Static Drain Source State Resistance Drain Current
Drain Source State Resistance RDS(on)
1000 -4.5
Drain Source Saturation Voltage VDS(on) (mV)
-800
-400
-1.5
-200
-0.75 -0.5
Pulse Test -0.1
Gate Source Voltage
Drain Current
Rev.5.00, 2006 page
HAT1108C
Static Drain Source State Resistance Temperature
Forward Transfer Admittance |yfs|
Pulse Test -1.5
Static Drain Source State Resistance RDS(on)
Forward Transfer Admittance Drain Current
-25°C
-4.5
-0.5, -0.75
25°C Pulse Test -0.3 75°C
-0.5, -0.75, -1.5
-0.1
Case Temperature (°C)
Drain Current
Dynamic Input Characteristics
Typical Capacitance Drain Source Voltage
Gate Source Voltage
1000
Drain Source Voltage
Capacitance (pF)
Ciss Coss Crss
-1.5
Gate Charge (nC)
Drain Source Voltage
Reverse Drain Current Source Drain Voltage
Pulse Test
Switching Characteristics
Reverse Drain Current
td(off)
Switching Time (ns)
td(on)
25°C -0.3
-4.5
-0.4
-0.8
-1.2
-1.6
-2.0
-0.1
Source Drain Voltage
Drain Current
Rev.5.00, 2006 page
HAT1108C
Switching Time Test Circuit
Monitor D.U.T. -4.5 Vout td(on) td(off) Vout Monitor
Waveform
Rev.5.00, 2006 page
HAT1108C
Package Dimensions
Package Name CMFPAK-6 JEITA Package Code RENESAS Code PWSF0006JA-A Previous Code CMFPAK-6 CMFPAK-6V MASS[Typ.] 0.0065g
Reference Symbol
Dimension Millimeters
Pattern terminal position areas
Section
0.15 2.05 0.15
0.22 0.13 0.11 0.65
0.01 0.79 0.15 2.15 0.45 0.05 0.05 0.35
1.65
Ordering Information
Part Name HAT1108C-EL-E Quantity 3000 Shipping Container Taping
Note: some grades, production terminated. Please contact Renesas sales office check state production before ordering product.
Rev.5.00, 2006 page
Sales Strategic Planning Div.
Keep safety first your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Renesas Technology Corp. puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corp. product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corp. third party. Renesas Technology Corp. assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corp. without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corp. assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corp. various means, including Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corp. assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corp. semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corp. necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corp. further details these materials products contained therein.
RENESAS SALES OFFICES
Refer latest detailed information. Renesas Technology America, Inc. Holger Way, Jose, 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> 2715-2888, Fax: <886> 2713-2999 Renesas Technology Singapore Pte. Ltd. Harbour Front Avenue, #06-10, Keppel Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 796-3115, Fax: <82> 796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Unit 906, Block Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
2006. Renesas Technology Corp., rights reserved. Printed Japan.
Colophon .6.0
Other recent searches
SAM9713 - SAM9713 SAM9713 Datasheet
PCM1718E - PCM1718E PCM1718E Datasheet
GMS960800B - GMS960800B GMS960800B Datasheet
GMS970800B - GMS970800B GMS970800B Datasheet
PVN013 - PVN013 PVN013 Datasheet
MBR15xxCT - MBR15xxCT MBR15xxCT Datasheet
CDZ12B - CDZ12B CDZ12B Datasheet
AS158-59 - AS158-59 AS158-59 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
