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REJ03G1231-0400 Rev.4.00 2006 on-resistance RDS(on) typ. -4.5 dri
Top Searches for this datasheetHAT1094C REJ03G1231-0400 Rev.4.00 2006 on-resistance RDS(on) typ. -4.5 drive current. gate drive devices. High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband Source Drain Drain Drain Drain Gate Absolute Maximum Ratings 25°C) Item Symbol Ratings Drain Source voltage VDSS Gate Source voltage VGSS Drain current -2.5 Drain peak current (pulse)Note1 Body Drain diode reverse drain current -2.5 Channel dissipation PchNote Channel temperature Storage temperature Tstg +150 Notes: duty cycle When using glass epoxy board. (FR4 1.6mm), 25°C Unit Rev.4.00 2006 page HAT1094C Electrical Characteristics 25°C) Item Drain Source breakdown voltage Gate Source breakdown voltage Gate Source leakage current Drain Source leakage current Gate Source cutoff voltage Drain Source state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(th) RDS(on) Min. -0.3 Typ. -0.85 Max. -1.2 -1.1 Unit Test Conditions ±100 ±6.4 Note3 -1.3 -4.5 Note3 -1.3 -2.5 Note3 -1.3 -1.8 Note3 -1.3 Note3 -4.5 -2.5 -4.5 -1.3 -2.5 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate Source charge Gate Drain charge Turn delay time Rise time Turn delay time Fall time Body Drain diode forward voltage Notes: Pulse test Ciss Coss Crss td(on) td(off) Rev.4.00 2006 page HAT1094C Main Characteristics Power Temperature Derating -100 Maximum Safe Operation Area 25°C, 1shot pulse When using board. Channel Dissipation Drain Current Test Condition When using glass epoxy board (FR4 mm), 25°C -0.1 Operation this area limited RDS(on) -0.01 -0.001 -0.001 -0.01 -0.1 -100 Ambient Temperature (°C) Drain Source Voltage Typical Output Characteristics -4.5 -4.0 Pulse Test -3.5 Typical Transfer Characteristics 25°C -25°C Pulse Test Drain Current Drain Current -3.0 75°C -2.5 -2.0 -1.8 -1.5 Drain Source Voltage Gate Source Voltage Drain Source Saturation Voltage Gate Source Voltage Drain Source Voltage VDS(on) (mV) -400 Pulse Test Static Drain Source State Resistance Drain Current Drain Source State Resistance RDS(on) 1000 -1.8 -2.5 -4.5 -300 -200 -2.5 -100 -1.3 -0.5 Pulse Test -0.1 -100 Gate Source Voltage Drain Current Rev.4.00 2006 page HAT1094C Static Drain Source State Resistance Temperature -1.8 -1.3 -0.5 -2.5 Static Drain Source State Resistance RDS(on) Forward Transfer Admittance Drain Current Forward Transfer Admittance |yfs| -25°C 25°C -0.5, -1.3 75°C -2.5 -4.5 -0.5, -1.3, -2.5 Pulse Test -0.01 -0.03 -0.1 -0.3 Pulse Test Case Temperature (°C) Drain Current Dynamic Input Characteristics Drain Source Voltage Typical Capacitance Drain Source Voltage Gate Source Voltage 1000 Ciss Capacitance (pF) Coss Crss Gate Charge (nc) Drain Source Voltage Reverse Drain Current Source Drain Voltage 10000 Switching Characteristics -4.5 Reverse Drain Current Switching Time (ns) 1000 td(off) Pulse Test -0.4 -0.8 -1.2 -1.6 -2.0 d(on) -0.001 -0.01 -0.1 Source Drain Voltage Drain Current Rev.4.00 2006 page HAT1094C Switching Time Test Circuit Monitor D.U.T. -4.5 Vout td(on) Vout Monitor Waveform td(off) Rev.4.00 2006 page HAT1094C Package Dimensions Package Name CMFPAK-6 JEITA Package Code RENESAS Code PWSF0006JA-A Previous Code CMFPAK-6 CMFPAK-6V MASS[Typ.] 0.0065g Reference Symbol Dimension Millimeters Pattern terminal position areas Section 0.15 2.05 0.15 0.22 0.13 0.11 0.65 0.01 0.79 0.15 2.15 0.45 0.05 0.05 0.35 1.65 Ordering Information Part Name HAT1094C-EL-E Quantity 3000 Taping Shipping Container Note: some grades, production terminated. 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