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REJ03G0948-0300 (Previous: ADE-208-1288) Rev.3.00 2006 High speed
Top Searches for this datasheet2SK1519, 2SK1520 REJ03G0948-0300 (Previous: ADE-208-1288) Rev.3.00 2006 High speed power switching Features on-resistance High speed switching drive current Built-in fast recovery diode (trr Suitable motor control, switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) Gate Drain Source Rev.3.00 2006 page 2SK1519, 2SK1520 Absolute Maximum Ratings 25°C) Item Drain source voltage 2SK1519 2SK1520 Symbol VDSS VGSS ID(pulse)*1 Pch*2 Tstg Ratings +150 Unit Gate source voltage Drain current Drain peak current Body drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: duty cycle Value 25°C Electrical Characteristics 25°C) Item Drain source breakdown voltage 2SK1519 2SK1520 Gate source breakdown voltage Gate source leak current Zero gate voltage drain 2SK1519 current 2SK1520 Gate source cutoff voltage Static drain source 2SK1519 state resistance 2SK1520 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body drain diode forward voltage Body drain diode reverse recovery time Note: Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) td(off) 0.11 0.12 5800 1550 0.15 0.16 Unit Test conditions ±100 diF/dt A/µs Rev.3.00 2006 page 2SK1519, 2SK1520 Main Characteristics Power Temperature Derating Maximum Safe Operation Area 1,000 (on) limit Channel Dissipation Drain Current 25°C 2SK1519 2SK1520 1,000 Case Temperature (°C) Drain Source Voltage Typical Output Characteristics Pulse Test Typical Transfer Characteristics Pulse Test Drain Current Drain Current 75°C 25°C -25°C Drain Source Voltage Drain Source Saturation Voltage Gate Source Voltage Pulse Test Gate Source Voltage Static Drain Source State Resistance Drain Current Pulse Test Drain Source Saturation Voltage (on) Static Drain Source State Resistance (on) 0.05 Gate Source Voltage Drain Current Rev.3.00 2006 page 2SK1519, 2SK1520 Static Drain Source State Resistance Temperature Pulse Test Static Drain Source State Resistance (on) Forward Transfer Admittance Drain Current Forward Transfer Admittance Pulse Test -25°C 25°C 75°C Case Temperature (°C) Body Drain Diode Reverse Recovery Time 1,000 10,000 di/dt A/µs, Pulse Test Capacitance (pF) Drain Current Typical Capacitance Drain Source Voltage Ciss Reverse Recovery Time (ns) 1,000 Coss Crss Reverse Drain Current Drain Source Voltage Dynamic Input Characteristics Drain Source Voltage 1,000 Switching Characteristics Gate Source Voltage 1,000 (off) Switching Time (ns) (on) Pulse Test duty Gate Charge (nc) Drain Current Rev.3.00 2006 page 2SK1519, 2SK1520 Reverse Drain Current Source Drain Voltage Reverse Drain Current Pulse Test Source Drain Voltage Normalized Transient Thermal Impedance Normalized Transient Thermal Impedance Pulse Width 25°C 0.05 ch-c ch-c ch-c 0.625°C/W, 25°C 0.02 0.03 0.01 ulse 0.01 Pulse Width Switching Time Test Circuit Monitor Waveforms Vout Monitor D.U.T (on) (off) Vout Rev.3.00 2006 page 2SK1519, 2SK1520 Package Dimensions Package Name TO-3PL JEITA Package Code RENESAS Code PRSS0004ZF-A Previous Code TO-3PL TO-3PLV MASS[Typ.] 9.9g Unit: 20.0 26.0 20.0 +0.25 -0.1 5.45 +0.25 -0.1 5.45 Ordering Information Part Name 2SK1519-E 2SK1520-E Quantity (Tube) (Tube) Shipping Container Note: some grades, production terminated. Please contact Renesas sales office check state production before ordering product. Rev.3.00 2006 page Sales Strategic Planning Div. Keep safety first your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Renesas Technology Corp. puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corp. product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corp. third party. 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