REJ03G0945-0300 Rev.3.00 2006 High speed power switching Fea

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REJ03G0945-0300 Rev.3.00 2006 High speed power switching Fea

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2SK1405
REJ03G0945-0300 Rev.3.00 2006
High speed power switching
Features
on-resistance High speed switching drive current Built-in fast diode (trr Suitable motor control, switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM)
Gate Drain Source
Rev.3.00 2006 page
2SK1405
Absolute Maximum Ratings
25°C)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: duty cycle Value 25°C Symbol VDSS VGSS ID(pulse)*1 Pch*2 Tstg Ratings +150 Unit
Electrical Characteristics
25°C)
Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body drain diode forward voltage Body drain diode reverse recovery time Note: Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) td(off) 0.35 3150 0.50 Unit Test conditions ±100 3.75
diF/dt A/µs
Rev.3.00 2006 page
2SK1405
Main Characteristics
Power Temperature Derating
Maximum Safe Operation Area
(on) mite
Channel Dissipation
Drain Current
0.03 0.01
25°C 1,000
Case Temperature (°C)
Drain Source Voltage
Typical Output Characteristics
Pulse Test
Typical Transfer Characteristics
Pulse Test
Drain Current
Drain Current
75°C 25°C -25°C
Drain Source Voltage Drain Source Saturation Voltage Gate Source Voltage
Pulse Test
Gate Source Voltage Static Drain Source State Resistance Drain Current
Pulse Test 0.05
Drain Source Saturation Voltage (on)
Gate Source Voltage
Static Drain Source State Resistance (on)
Drain Current
Rev.3.00 2006 page
2SK1405
Static Drain Source State Resistance Temperature
Forward Transfer Admittance
Pulse Test
Static Drain Source State Resistance (on)
Forward Transfer Admittance Drain Current
-25°C 25°C 75°C
Pulse Test
Case Temperature (°C) Body Drain Diode Reverse Recovery Time
10,000
Drain Current Typical Capacitance Drain Source Voltage
Reverse Recovery Time (ns)
Ciss
Capacitance (pF)
1,000 Coss
di/dt A/µs, 25°C Pulse Test
Crss
Reverse Drain Current
Drain Source Voltage
Dynamic Input Characteristics
Drain Source Voltage Gate Source Voltage
1,000
Switching Characteristics
(off)
Switching Time (ns)
(on)
duty
Gate Charge (nc)
Drain Current
Rev.3.00 2006 page
2SK1405
Reverse Drain Current Source Drain Voltage
Reverse Drain Current
Pulse Test
Source Drain Voltage
Normalized Transient Thermal Impedance Pulse Width
Normalized Transient Thermal Impedance
25°C
0.05
0.02
2.08°C/W, 25°C
0.03
0.01
Pulse Width
Switching Time Test Circuit
Monitor D.U.T. Vout td(on) Vout Monitor
Waveform
td(off)
Rev.3.00 2006 page
2SK1405
Package Dimensions
Package Name TO-3PFM JEITA Package Code SC-93 RENESAS Code PRSS0003ZA-A Previous Code TO-3PFM TO-3PFMV MASS[Typ.] 5.2g
Unit:
15.6
19.9
0.66 5.45
21.0
0.86
0.86
5.45
Ordering Information
Part Name 2SK1405-E Quantity (Tube) Shipping Container
Note: some grades, production terminated. Please contact Renesas sales office check state production before ordering product.
Rev.3.00 2006 page
Sales Strategic Planning Div.
Keep safety first your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Renesas Technology Corp. puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corp. product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corp. third party. Renesas Technology Corp. assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Renesas Technology Corp. without notice product improvements other reasons. therefore recommended that customers contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Renesas Technology Corp. assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Renesas Technology Corp. various means, including Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Renesas Technology Corp. assumes responsibility damage, liability other loss resulting from information contained herein. Renesas Technology Corp. semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Renesas Technology Corp. authorized Renesas Technology Corp. product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corp. necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corp. further details these materials products contained therein.
RENESAS SALES OFFICES
Refer latest detailed information. Renesas Technology America, Inc. Holger Way, Jose, 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> 2715-2888, Fax: <886> 2713-2999 Renesas Technology Singapore Pte. Ltd. Harbour Front Avenue, #06-10, Keppel Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 796-3115, Fax: <82> 796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Unit 906, Block Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
2006. Renesas Technology Corp., rights reserved. Printed Japan.
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REJ03G0945-0300 Rev.3.00 2006 High speed power switching Fea

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