Silicon Power Transistors DESCRIPTION TO-3PN package type BDW83/8
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Silicon Power Transistors
DESCRIPTION TO-3PN package type BDW83/83A/83B/83C/83D current gain APPLICATIONS power linear switching applications.
PINNING Base Collector;connected mounting base Emitter DESCRIPTION
BDW84/84A/84B/84C/84D
Fig.1 simplified outline (TO-3PN) symbol
Absolute maximum ratings(Tc=25
SYMBOL PARAMETER BDW84 BDW84A VCBO Collector-base voltage BDW84B BDW84C BDW84D BDW84 BDW84A VCEO Collector-emitter voltage BDW84B BDW84C BDW84D VEBO Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitter CONDITIONS VALUE -100 -120 -100 -120 -0.5 -65~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER BDW84 BDW84A V(BR)CEO Collector-emitter breakdown voltage BDW84B BDW84C BDW84D VCEsat-1 VCEsat-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter voltage BDW84 BDW84A ICBO Collector cut-off current BDW84B BDW84C BDW84D BDW84 BDW84A ICEO Collector cut-off current BDW84B BDW84C BDW84D IEBO hFE-1 hFE-2 toff Emitter cut-off current current gain current gain Diode forward voltage Turn-on time Turn-off time IC=-6A ,IB=-12mA IC=-30mA, IB=0 SYMBOL
BDW84/84A/84B/84C/84D
CONDITIONS
-100 -120
TYP.
UNIT
-2.5 -4.0 -2.5 -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 -0.5 -5.0
IC=-15A ,IB=-150mA IC=-6A VCE=-3V VCB=-45V, IE=0 TC=150 VCB=-60V, IE=0 TC=150 VCB=-80V, IE=0 TC=150 VCB=-100V, IE=0 TC=150 VCB=-120V, IE=0 TC=150 VCE=-30V, IB=0 VCE=-30V, IB=0 VCE=-40V, IB=0 VCE=-50V, IB=0 VCE=-60V, IB=0 VEB=-5V; IC=0 IC=-6A VCE=-3V IC=-15A VCE=-3V IE=-15A =-10 =-IB2=-40 RL=3B; VBE(off) =4.2V Duty CycleC2%
20000
-3.5
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case 0.83 UNIT
Silicon Power Transistors
PACKAGE OUTLINE
BDW84/84A/84B/84C/84D
Fig.2 Outline dimensions(unindicated tolerance:±0.1mm)
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