Silicon Power Transistors DESCRIPTION TO-3PN package type BDW84/8
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Silicon Power Transistors
DESCRIPTION TO-3PN package type BDW84/84A/84B/84C/84D current gain APPLICATIONS power linear switching applications.
PINNING Base Collector;connected mounting base Emitter DESCRIPTION
BDW83/83A/83B/83C/83D
Fig.1 simplified outline (TO-3PN) symbol
Absolute maximum ratings(Tc=25
SYMBOL PARAMETER BDW83 BDW83A VCBO Collector-base voltage BDW83B BDW83C BDW83D BDW83 BDW83A VCEO Collector-emitter voltage BDW83B BDW83C BDW83D VEBO Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitter CONDITIONS VALUE -65~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER BDW83 BDW83A V(BR)CEO Collector-emitter breakdown voltage BDW83B BDW83C BDW83D VCEsat-1 VCEsat-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter voltage BDW83 BDW83A ICBO Collector cut-off current BDW83B BDW83C BDW83D BDW83 BDW83A ICEO Collector cut-off current BDW83B BDW83C BDW83D IEBO hFE-1 hFE-2 toff Emitter cut-off current current gain current gain Diode forward voltage Turn-on time Turn-off time IC=6A ,IB=12mA IC=15A ,IB=150mA IC=6A VCE=3V VCB=45V, IE=0 TC=150 VCB=60V, IE=0 TC=150 VCB=80V, IE=0 TC=150 VCB=100V, IE=0 TC=150 VCB=120V, IE=0 TC=150 VCE=30V, IB=0 VCE=30V, IB=0 VCE=40V, IB=0 VCE=50V, IB=0 VCE=60V, IB=0 VEB=5V; IC=0 IC=6A VCE=3V IC=15A VCE=3V IE=15A IC=30mA, IB=0 SYMBOL
BDW83/83A/83B/83C/83D
CONDITIONS
TYP.
UNIT
20000
=-IB2=40 RL=3B; VBE(off) -4.2V Duty CycleC2%
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case 0.83 UNIT
Silicon Power Transistors
PACKAGE OUTLINE
BDW83/83A/83B/83C/83D
Fig.2 Outline dimensions(unindicated tolerance:±0.1mm)
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