Silicon Power Transistors DESCRIPTION TO-3PN package type BDV66/6

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Silicon Power Transistors DESCRIPTION TO-3PN package type BDV66/6

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Silicon Power Transistors
DESCRIPTION TO-3PN package type BDV66/66A/66B/66C/66D current gain APPLICATIONS audio output stages general amplifier switching applications.
PINNING Base Collector;connected mounting base Emitter DESCRIPTION
BDV67/67A/67B/67C/67D
Fig.1 simplified outline (TO-3PN) symbol
Absolute maximum ratings(Tc=25
SYMBOL PARAMETER BDV67 BDV67A VCBO Collector-base voltage BDV67B BDV67C BDV67D BDV67 BDV67A VCEO Collector-emitter voltage BDV67B BDV67C BDV67D VEBO Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -65~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER BDV67 BDV67A V(BR)CEO Collector-emitter breakdown voltage BDV67B BDV67C BDV67D VCEsat ICBO ICEO IEBO hFE-1 hFE-2 hFE-3 toff Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current Emitter cut-off current current gain current gain current gain Collector capacitance Diode forward voltage Turn-on time Turn-off time IC=10A ,IB=40mA IC=10A VCE=3V IC=30mA, IB=0 SYMBOL
BDV67/67A/67B/67C/67D
CONDITIONS
TYP.
UNIT
3000 1000 1000
VCB=VCBOmax, IE=0 VCB=1/2VCBOmax; Tj=150 VCE=1/2VCEOmax, IB=0 VEB=5V; IC=0 IC=1A VCE=3V IC=10A VCE=3V IC=16A VCE=3V IE=0 VCB=10V;f=1MHz IE=10A =-IB2=40
THERMAL CHARACTERISTICS
SYMBOL j-mb PARAMETER Thermal resistance junction mounting base 0.625 UNIT
Silicon Power Transistors
PACKAGE OUTLINE
BDV67/67A/67B/67C/67D
Fig.2 Outline dimensions(unindicated tolerance:±0.1mm)

Silicon Power Transistors DESCRIPTION TO-3PN package type BDV66/6

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