Silicon Power Transistors DESCRIPTION TO-3PN package type BDV64/6

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Silicon Power Transistors DESCRIPTION TO-3PN package type BDV64/6

Datasheet Thumbnail

Top Searches for this datasheet

Silicon Power Transistors
DESCRIPTION TO-3PN package type BDV64/64A/64B/64C current gain APPLICATIONS general purpose amplifier applications.
PINNING Base Collector;connected mounting base Emitter DESCRIPTION
BDV65/65A/65B/65C
Fig.1 simplified outline (TO-3PN) symbol
Absolute maximum ratings(Tc=25
SYMBOL PARAMETER BDV65 VCBO Collector-base voltage BDV65A BDV65B BDV65C BDV65 VCEO Collector-emitter voltage BDV65A BDV65B BDV65C VEBO Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitter CONDITIONS VALUE -65~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER BDV65 Collector-emitter breakdown voltage BDV65A IC=30mA, IB=0 BDV65B BDV65C VCEsat Collector-emitter saturation voltage Base-emitter voltage BDV65 Collector cut-off current BDV65A BDV65B BDV65C BDV65 Collector cut-off current BDV65A BDV65B BDV65C IEBO Emitter cut-off current current gain Diode forward voltage IC=5A ,IB=20mA IC=5A VCE=4V VCB=60V, IE=0 VCB=30V, IE=0;TC=150 VCB=80V, IE=0 VCB=40V, IE=0;TC=150 VCB=100V, IE=0 VCB=50V, IE=0;TC=150 VCB=120V, IE=0 VCB=60V, IE=0;TC=150 VCE=30V, IB=0 VCE=40V, IB=0 CONDITIONS SYMBOL
BDV65/65A/65B/65C
TYP.
UNIT
V(BR)CEO
ICBO
ICEO
VCE=50V, IB=0 VCE=60V, IB=0 VEB=5V; IC=0 IC=5A VCE=4V IE=10A 1000
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case UNIT
Silicon Power Transistors
PACKAGE OUTLINE
BDV65/65A/65B/65C
Fig.2 Outline dimensions(unindicated tolerance:±0.1mm)

Silicon Power Transistors DESCRIPTION TO-3PN package type BDV64/6

Top Searches for this datasheet

Other recent searches