Silicon Power Transistors DESCRIPTION TO-3PN package type BDV65/6
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Silicon Power Transistors
DESCRIPTION TO-3PN package type BDV65/65A/65B/65C current gain APPLICATIONS general purpose amplifier applications.
PINNING Base Collector;connected mounting base Emitter DESCRIPTION
BDV64/64A/64B/64C
Fig.1 simplified outline (TO-3PN) symbol
Absolute maximum ratings(Tc=25
SYMBOL PARAMETER BDV64 VCBO Collector-base voltage BDV64A BDV64B BDV64C BDV64 VCEO Collector-emitter voltage BDV64A BDV64B BDV64C VEBO Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitter CONDITIONS VALUE -100 -120 -100 -120 -0.5 -65~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER BDV64 Collector-emitter breakdown voltage BDV64A IC=-30mA, IB=0 BDV64B BDV64C VCEsat Collector-emitter saturation voltage Base-emitter voltage BDV64 Collector cut-off current BDV64A BDV64B BDV64C BDV64 Collector cut-off current BDV64A BDV64B BDV64C IEBO Emitter cut-off current current gain Diode forward voltage IC=-5A ,IB=-20mA IC=-5A VCE=-4V VCB=-60V, IE=0 VCB=-30V, IE=0;TC=150 VCB=-80V, IE=0 VCB=-40V, IE=0;TC=150 VCB=-100V, IE=0 VCB=-50V, IE=0;TC=150 VCB=-120V, IE=0 VCB=-60V, IE=0;TC=150 VCE=-30V, IB=0 VCE=-40V, IB=0 CONDITIONS SYMBOL
BDV64/64A/64B/64C
TYP.
UNIT
V(BR)CEO
-100 -120 -2.0 -2.5 -0.4 -2.0 -0.4 -2.0 -0.4 -2.0 -0.4 -2.0
ICBO
ICEO
VCE=-50V, IB=0 VCE=-60V, IB=0 VEB=-5V; IC=0 IC=-5A VCE=-4V IE=-10A 1000 -3.5
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case UNIT
Silicon Power Transistors
PACKAGE OUTLINE
BDV64/64A/64B/64C
Fig.2 Outline dimensions(unindicated tolerance:±0.1mm)
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