Silicon Power Transistors DESCRIPTION TO-3PN package type BD745/A
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Silicon Power Transistors
DESCRIPTION TO-3PN package type BD745/A/B/C current capability power dissipation APPLICATIONS power linear switching applications
PINNING Base Collector;connected mounting base Emitter DESCRIPTION
BD746/A/B/C
Fig.1 simplified outline (TO-3PN) symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER BD746 VCBO Collector-base voltage BD746A BD746B BD746C BD746 VCEO Collector-emitter voltage BD746A BD746B BD746C VEBO Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitter CONDITIONS VALUE -110 -100 -65~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER BD746 Collector-emitter breakdown voltage BD746A IC=-30mA; IB=0 BD746B BD746C VCEsat-1 VCEsat-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter voltage Base-emitter voltage BD746/A ICEO Collector cut-off current BD746B/C BD746 BD746A ICBO Collector cut-off current BD746B BD746C IEBO hFE-1 hFE-2 hFE-3 Emitter cut-off current current gain current gain current gain VCE=-60V; IB=0 VCE=-50V; VBE=0 TC=125 VCE=-70V; VBE=0 TC=125 VCE=-90V; VBE=0 TC=125 VCE=-110V; VBE=0 TC=125 VEB=-5V; IC=0 IC=-1A VCE=-4V IC=-5A VCE=-4V IC=-20A VCE=-4V IC=-5 A;IB=-0.5 IC=-20 A;IB=-5 IC=-5A VCE=-4V IC=-20A VCE=-4V VCE=-30V; IB=0 -100 CONDITIONS SYMBOL
BD746/A/B/C
TYP.
UNIT
V(BR)CEO
-1.0 -3.0 -1.0 -3.0
-0.1 -0.1 -5.0 -0.1 -5.0 -0.1 -5.0 -0.1 -5.0 -0.5
Switching times resistive load Delay time Rise time Storage time Fall time IC=-5 A;IB1=-IB2=-0.5 VBE(off)=4.2V; RL=6A tp=20µs 0.02 0.12
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case UNIT
Silicon Power Transistors
PACKAGE OUTLINE
BD746/A/B/C
Fig.2 Outline dimensions (unindicated tolerance:±0.10
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