Silicon Power Transistors DESCRIPTION TO-3PN package type BD746/A
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Silicon Power Transistors
DESCRIPTION TO-3PN package type BD746/A/B/C current capability power dissipation APPLICATIONS power linear switching applications
PINNING Base Collector;connected mounting base Emitter DESCRIPTION
BD745/A/B/C
Fig.1 simplified outline (TO-3PN) symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER BD745 VCBO Collector-base voltage BD745A BD745B BD745C BD745 VCEO Collector-emitter voltage BD745A BD745B BD745C VEBO Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitter CONDITIONS VALUE -65~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER BD745 Collector-emitter breakdown voltage BD745A IC=30mA; IB=0 BD745B BD745C VCEsat-1 VCEsat-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter voltage Base-emitter voltage BD745/A ICEO Collector cut-off current BD745B/C BD745 BD745A ICBO Collector cut-off current BD745B BD745C IEBO hFE-1 hFE-2 hFE-3 Emitter cut-off current current gain current gain current gain VCE=60V; IB=0 VCE=50V; VBE=0 TC=125 VCE=70V; VBE=0 TC=125 VCE=90V; VBE=0 TC=125 VCE=110V; VBE=0 TC=125 VEB=5V; IC=0 IC=1A VCE=4V IC=5A VCE=4V IC=20A VCE=4V IC=5 A;IB=0.5 IC=20 A;IB=5 IC=5A VCE=4V IC=20A VCE=4V VCE=30V; IB=0 CONDITIONS SYMBOL
BD745/A/B/C
TYP.
UNIT
V(BR)CEO
Switching times resistive load Delay time Rise time Storage time Fall time IC=5 A;IB1=-IB2=0.5 VBE(off)=-4.2V; RL=6A tp=20µs 0.02 0.35
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case UNIT
Silicon Power Transistors
PACKAGE OUTLINE
BD745/A/B/C
Fig.2 Outline dimensions (unindicated tolerance:±0.10
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