Silicon Power Transistors BU326 BU326A DESCRIPTION TO-3 pack
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Silicon Power Transistors
BU326 BU326A
DESCRIPTION TO-3 package voltage;high speed collector saturation voltage. APPLICATIONS operating receiver's chopper supplies.
PINNING(see fig.2) Base Emitter Collector Fig.1 simplified outline (TO-3) symbol DESCRIPTION
Absolute maximum ratings (Tc=25
SYMBOL PARAMETER BU326 VCBO Collector-base voltage BU326A BU326 VCEO Collector-emitter voltage BU326A VEBO Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -65~200 -65~200 Open emitter CONDITIONS VALUE UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case 2.33 UNIT
Silicon Power Transistors
BU326 BU326A
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER BU326 IC=0.1A; IB=0 BU326A IC=2.5 A;IB=0.5A IC=4A;IB=1.25 IC=2.5 A;IB=0.5A IC=4A;IB=1.25 VCE=800V;VBE=0 BU326A IEBO Emitter cut-off current current gain Transition frequency VCE=900V;VBE=0 VEB=10V; IC=0 IC=1A VCE=5V IC=0.2A VCE=10V; f=1MHz CONDITIONS TYP. UNIT SYMBOL
VCEO(SUS)
Collector-emitter sustaining voltage
VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2
Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage BU326
ICES
Collector cut-off current
Switching times Turn-on time Storage time Fall time IC=2.5A IB1=0.5A;IB2=-1A VCC=250V
Silicon Power Transistors
PACKAGE OUTLINE
BU326 BU326A
Fig.2 Outline dimensions
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