Silicon Power Transistors BD434/436/438 DESCRIPTION TO-126 p
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Silicon Power Transistors
BD434/436/438
DESCRIPTION TO-126 package type BD433/435/437 APPLICATIONS medium power linear switching applications
PINNING DESCRIPTION Emitter Collector;connected mounting base Base
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER BD434 VCBO Collector-base voltage BD436 BD438 BD434 VCEO Collector-emitter voltage BD436 BD438 VEBO Tstg Emitter -base voltage Collector current (DC) Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -65~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage BD434/436 IC=-2A; IB=-0.2A BD438 BD434/436 Base-emitter voltage BD438 BD434 VCEO(SUS) Collector-emitter sustaining voltage BD436 BD438 BD434 ICES Collector cut-off current BD436 BD438 BD434 ICES Collector cut-off current BD436 BD438 IEBO hFE-1 hFE-2 hFE-3 Emitter cut-off current BD434/436 current gain BD438 current gain BD434/436 current gain BD438 Transition frequency IC=-250mA; VCE=-1V IC=-2A VCE=-1V IC=-0.5A VCE=-1V IC=-10mA VCE=-5V VCB=-22V; IE=0 VCB=-32V; IE=0 VCB=-45V; IE=0 VCE=-22V; VBE=0 VCE=-32V; VBE=0 VCE=-45V; VBE=0 VEB=-5V; IC=0 IC=-0.1A; IB=0 IC=-2A VCE=-1V CONDITIONS SYMBOL VCEsat
BD434/436/438
TYP. -0.2
-0.5
UNIT
-0.6 -1.1 -1.2
-100
-100
Silicon Power Transistors
PACKAGE OUTLINE
BD434/436/438
Fig.2 Outline dimensions
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