Silicon Power Transistors DESCRIPTION TO-247 package voltage ,hig

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Silicon Power Transistors DESCRIPTION TO-247 package voltage ,hig

Datasheet Thumbnail

Top Searches for this datasheet

Silicon Power Transistors
DESCRIPTION TO-247 package voltage ,high speed collector saturation voltage APPLICATIONS horizontal deflection circuits high very high resolution, monochrome color monitors PINNING
Base Collector;connected mounting base Emitter DESCRIPTION
MJW16206
Fig.1 simplified outline (TO-247) symbol
ABSOLUTE MAXIMUM RATINGS(Tc=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 TC=100 CONDITIONS Open emitter Open base Open collector VALUE 1200 -55~150 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 0.67 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain current gain current gain Transition frequency Collector outoput capacitance CONDITIONS IC=10mA; IB=0 IE=1.0mA; IC=0 IC=3A ;IB=0.4A IC=6.5A ;IB=1.5A IC=6.5A ;IB=1.5A VCE=1200V,VBE=0 VCE=850V,VBE=0 VEB=8V; IC=0 IC=1A VCE=5V IC=10A VCE=5V IC=12A VCE=5V IC=0.5A VCE=10V;f=1.0MHz IE=0; f=100kHz VCB=10V
MJW16206
SYMBOL VCEO(SUS) V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat) ICES IEBO hFE-1 hFE-2 hFE-3
TYP.
UNIT
Silicon Power Transistors
PACKAGE OUTLINE
MJW16206
Fig.2 Outline dimensions

Silicon Power Transistors DESCRIPTION TO-247 package voltage ,hig

Top Searches for this datasheet

Other recent searches