Silicon Power Transistors DESCRIPTION TO-247 package voltage ,hig

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Silicon Power Transistors DESCRIPTION TO-247 package voltage ,hig

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Silicon Power Transistors
DESCRIPTION TO-247 package voltage ,high speed APPLICATIONS Regulators Drivers Controls Circuits PINNING
Base Collector;connected mounting base Emitter DESCRIPTION
MJW16018
Fig.1 simplified outline (TO-247) symbol
ABSOLUTE MAXIMUM RATINGS(TC=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 TC=100 CONDITIONS Open emitter Open base Open collector VALUE 1500 -55~150 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current current gain Collector outoput capacitance CONDITIONS IC=50mA; IB=0 IC=5A ;IB=2A TC=110 IC=10A ;IB=5A IC=5A ;IB=2A TC=110 VCEV=1500V,VBE(off)=1.5Vdc TC=100 VCE=1500V; RBE=50> TC=100 VEB=6V; IC=0 IC=5A VCE=5V IE=0;f=1kHz VCB=10V SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat) ICEV ICER IEBO
MJW16018
TYP.
UNIT
0.25 1.50
Switching times resistive load Delay time Rise time Storage time Fall time IC=5A; IB1= IB2=2.0A VCC=250V ,RB2=3> PW=25µs Duty CycleC2% 0.085 0.90
Silicon Power Transistors
PACKAGE OUTLINE
MJW16018
Fig.2 Outline dimensions

Silicon Power Transistors DESCRIPTION TO-247 package voltage ,hig

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