Silicon Power Transistors DESCRIPTION With TO-220F package voltag

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Silicon Power Transistors DESCRIPTION With TO-220F package voltag

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Silicon Power Transistors
DESCRIPTION With TO-220F package voltage ,high speed APPLICATIONS 220V line-operated switchmode power supplies electronic light ballasts PINNING
Base Collector Emitter DESCRIPTION
MJF18004
Fig.1 simplified outline (TO-220F) symbol
ABSOLUTE MAXIMUM RATINGS(TC=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1000 -65~150 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case Thermal resistance junction ambient 3.12 62.5 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=0.1A; L=25mH IC=1A ;IB=0.1A TC=125 IC=2A ;IB=0.4A TC=125 IC=2.5A ;IB=0.5A IC=1A ;IB=0.1A IC=2A ;IB=0.4A IC=2.5A ;IB=0.5A VCES=RatedVCES; VEB=0 TC=125 VCES=800V ICEO IEBO hFE-1 hFE-2 hFE-3 hFE-4 Collector cut-off current Emitter cut-off current current gain current gain current gain current gain Transition frequency Collector outoput capacitance VCE=RatedVCEO; IB=0 VEB=9V; IC=0 IC=1A VCE=2.5V IC=1A VCE=5V IC=2A VCE=1V IC=5mA VCE=5V IC=0.5A VCE=10V;f=1.0MHz IE=0 VCB=10V;f=1.0MHz SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(sat)-1 VBE(sat)-2 VBE(sat)-3
MJF18004
TYP.
UNIT
0.45 0.75 1.25
ICES
Collector cut-off current
Switching times resistive load,Duty CycleC10%,Pulse Width=20µs Turn-on time Storage time Fall time VCC=250V ,IC=2.5A IB1=0.5A; IB2=0.5A
Silicon Power Transistors
PACKAGE OUTLINE
MJF18004
Fig.2 Outline dimensions

Silicon Power Transistors DESCRIPTION With TO-220F package voltag

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