Silicon Power Transistors MJF18002 DESCRIPTION TO-220F packa
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Silicon Power Transistors
MJF18002
DESCRIPTION TO-220F package voltage ,high speed APPLICATIONS 220V line-operated switchmode power supplies electronic light ballast PINNING
Base Collector Emitter Fig.1 simplified outline (TO-220F) symbol DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(TC=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1000 -65~150 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case Thermal resistance junction ambient 3.12 62.5 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=0.1A; L=25mH IC=0.4A ;IB=40mA TC=125 IC=1A ;IB=0.2A TC=125 IC=0.4A ;IB=40mA IC=1A ;IB=0.2A VCES=RatedVCES; VEB=0 TC=125 VCES=800V ICEO IEBO hFE-1 hFE-2 hFE-3 hFE-4 Collector cut-off current Emitter cut-off current current gain current gain current gain current gain Transition frequency Collector outoput capacitance VCE=RatedVCEO; IB=0 VEB=9V; IC=0 IC=0.2A VCE=5V IC=0.4A VCE=1V IC=1A VCE=1V IC=10mA VCE=5V IC=0.5A VCE=10V;f=1.0MHz IE=0 VCB=10V;f=1.0MHz SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2
MJF18002
TYP.
UNIT
1.25
ICES
Collector cut-off current
Switching times resistive load,Duty CycleB10%,Pulse Width=20µs toff toff Turn-on time Turn-off time Turn-on time Turn-off time VCC=300V ,IC=0.4A IB1=40mA; IB2=0.2A
VCC=300V ,IC=1.0A IB1=0.2A; IB2=0.5A
Silicon Power Transistors
PACKAGE OUTLINE
MJF18002
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
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