Silicon Power Transistors MJF122 DESCRIPTION TO-220F package
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Silicon Power Transistors
MJF122
DESCRIPTION TO-220F package current gain collector saturation voltage type MJF127 APPLICATIONS general-purpose amplifier switching applications. PINNING
Base Collector Emitter DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(Tc=25
SYMBOL VCBO VCEO VEBO PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-Pulse Base current-DC TC=25 Collector power dissipation Ta=25 Tstg Junction temperature Storage temperature -65~150 Open emitter Open base Open collector CONDITIONS VALUE UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current Emitter cut-off current current gain current gain Output capacitance CONDITIONS IC=0.1A, IB=0 IC=3A ,IB=12mA IC=5A ,IB=20mA IC=3.0A VCE=3V VCB=100V, IE=0 VCE=50V, IB=0 VEB=5V; IC=0 IC=0.5A VCE=3V IC=3.0A VCE=3V IE=0 VCB=10V,f=0.1MHz 1000 2000 TYP.
MJF122
SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 ICBO ICEO IEBO hFE-1 hFE-2
UNIT
Silicon Power Transistors
PACKAGE OUTLINE
MJF122
Fig.2 Outline dimensions
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