Silicon Power Transistors MJE18008 DESCRIPTION TO-220C packa
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Silicon Power Transistors
MJE18008
DESCRIPTION TO-220C package voltage ,high speed APPLICATIONS 220V line-operated switchmode power supplies electronic light ballasts PINNING
Base Collector;connected mounting base Emitter DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(TC=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1000 -65~150 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case Thermal resistance junction ambient VALUE 62.5 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=0.1A; L=25mH IC=2A; IB=0.2A TC=125 IC=4.5A; IB=0.9A TC=125 IC=2A; IB=0.2A IC=4.5A; IB=0.9A VCES=RatedVCES; VEB=0 TC=125 VCES=800V ICEO IEBO hFE-1 hFE-2 hFE-3 hFE-4 Collector cut-off current Emitter cut-off current current gain current gain current gain current gain Transition frequency Collector outoput capacitance VCE=RatedVCEO; IB=0 VEB=9V; IC=0 IC=1A VCE=5V IC=4.5A VCE=1V IC=2A VCE=1V IC=10mA VCE=5V IC=0.5A VCE=10V;f=1MHz IE=0 VCB=10V;f=1MHz SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2
MJE18008
TYP.
UNIT
0.65 1.10 1.25
ICES
Collector cut-off current
Switching times resistive load,Duty CycleC10%,Pulse Width=20µs toff toff Turn-on time Turn-off time Turn-on time Turn-off time VCC=300V ,IC=2A IB1=0.2A; IB2=1.0A 0.18
VCC=300V ,IC=4.5A IB1=0.9A; IB2=2.25A
Silicon Power Transistors
PACKAGE OUTLINE
MJE18008
Fig.2 Outline dimensions (unindicated tolerance: 0.10mm)
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