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Silicon Power Transistors DESCRIPTION TO-3PN package voltage ,hig


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Silicon Power Transistors
DESCRIPTION TO-3PN package voltage ,high speed APPLICATIONS suited 115V 220V switchmode applications such switching regulators,inverters ,motor controls,solenoid/ relay drivers deflection circuits
PINNING Base Collector;connected mounting base Emitter DESCRIPTION
MJE13009
Fig.1 simplified outline (TO-3PN) symbol
Absolute maximum ratings(Tc=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Emitter current Emitter current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature Ta=25 TC=25 CONDITIONS Open emitter Open base Open collector VALUE -65~150 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance from junction case VALUE 1.25 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain current gain Transition frequency Collector outoput capacitance CONDITIONS IC=10mA; IB=0 IC=5A; IB=1A IC=8A ;IB=1.6A TC=100 IC=12A; IB=3A IC=5A; IB=1A IC=8A; IB=1.6A TC=100 VCEV=Rated value, VBE(off)=1.5V dc;TC=100 VEB=9V; IC=0 IC=5A VCE=5V IC=8A VCE=5V IC=0.5A VCE=10V;f=1MHz IE=0; f=0.1MHz VCB=10V SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VCEsat-3 VBEsat-1 VBEsat-2 ICEV IEBO hFE-1 hFE-2
MJE13009
TYP.
UNIT
Switching times resistive load Delay time Rise time Storage time Fall time VCC=125V ,IC=8A IB1=-IB2=1.6A tp=25µs duty cycleD1% 0.06 0.45 1.30 0.20
Silicon Power Transistors
PACKAGE OUTLINE
MJE13009
Fig.2 Outline dimensions (unindicated tolerance: 0.10mm)
Silicon Power Transistors
MJE13009
Silicon Power Transistors
MJE13009

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