Silicon Power Transistors DESCRIPTION TO-3PN package type BD246/A
|
|
|
Top Searches for this datasheet
Silicon Power Transistors
DESCRIPTION TO-3PN package type BD246/A/B/C APPLICATIONS medium power linear switching applications
PINNING Base Collector;connected mounting base Emitter DESCRIPTION
BD245/A/B/C
Fig.1 simplified outline (TO-3PN) symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER BD245 VCBO Collector-base voltage BD245A BD245B BD245C BD245 VCEO Collector-emitter voltage BD245A BD245B BD245C VEBO Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -65~150 -65~150 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 1.56 UNIT
Silicon Power Transistors
BD245/A/B/C
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER BD245 Collector-emitter breakdown voltage BD245A IC=30mA ;IB=0 BD245B BD245C VCEsat-1 VCEsat-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter voltage Base-emitter voltage Collector cut-off current Emitter cut-off current current gain current gain current gain BD245/245A BD245B/245C IC=3A ;IB=0.3A IC=10A ;IB=2.5A IC=3A VCE=4V IC=10A VCE=4V VCE=30V; IB=0 VCE=60V; IB=0 VEB=5V; IC=0 IC=1A VCE=4V IC=3A VCE=4V IC=10A VCE=4V CONDITIONS TYP. UNIT SYMBOL
VCEO(BR)
ICEO
IEBO hFE-1 hFE-2 hFE-3
Switching times toff Turn-on time Turn-off time IC=1A; IB1=-IB2=0.1A RL=20@
Silicon Power Transistors
PACKAGE OUTLINE
BD245/A/B/C
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
Other recent searches
uPG2124TH - uPG2124TH uPG2124TH Datasheet
MX23L3211 - MX23L3211 MX23L3211 Datasheet
LM2990 - LM2990 LM2990 Datasheet
CS2841B - CS2841B CS2841B Datasheet
AN-905 - AN-905 AN-905 Datasheet
AN2K2J2-1 - AN2K2J2-1 AN2K2J2-1 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
