Silicon Power Transistors MJE13004 DESCRIPTION TO-220C packa
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Silicon Power Transistors
MJE13004
DESCRIPTION TO-220C package voltage ,high speed APPLICATIONS suited 115V 220V switchmode applications such switching regulators,inverters ,motor controls,solenoid/ relay drivers deflection circuits PINNING
Base Collector;connected mounting base Emitter DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(TC=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-PeaK Total power dissipation Junction temperature Storage temperature Ta=25 TC=25 CONDITIONS Open emitter Open base Open collector VALUE -65~150 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance from junction case 1.67 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain current gain Transition frequency Collector outoput capacitance CONDITIONS IC=10mA ;IB=0 IC=1A; IB=0.2A IC=2A; IB=0.5A IC=4A;IB=1A IC=1A; IB=0.2A IC=2A ;IB=0.5A VCEV=600V; VBE=1.5V TC=100 VEB=9V; IC=0 IC=1A VCE=5V IC=2A VCE=5V IC=0.5A VCE=10V;f=1MHz IE=0; f=1MHz VCB=10V
MJE13004
SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(sat)-1 VBE(sat)-2 ICEV IEBO hFE-1 hFE-2
TYP.
UNIT
Switching times Delay time Rise time Storage time Fall time VCC=125V ,IC=2A IB1=-IB2=0.4A tp=25µs;duty cycleD1%
Silicon Power Transistors
PACKAGE OUTLINE
MJE13004
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
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