Silicon Power Transistors MJE2955T DESCRIPTION TO-220 packag

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Silicon Power Transistors MJE2955T DESCRIPTION TO-220 packag

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Silicon Power Transistors
MJE2955T
DESCRIPTION TO-220 package type MJE3055T current gain -hFE 20-70 saturation voltage VCE(sat) -1.1 (Max) APPLICATIONS general-purpose switching amplifier applications. PINNING
Emitter Collector;connected mounting base Base Fig.1 simplified outline (TO-220) symbol DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(TC=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -55~150 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 1.67 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current current gain current gain Transition frequency CONDITIONS IC=-0.2A ;IB=0 IC=-4A ;IB=-0.4A IC=-10A ;IB=-3.3A IC=-4A VCE=-4V VCE=-30V; IB=0 VCE=-70V; VBE(off)=-1.5V TC=150 VCB=-70V; IE=0 TC=150 VEB=-5V; IC=0 IC=-4A VCE=-4V IC=-10A VCE=-4V IC=-0.5A VCE=-10V
MJE2955T
SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 ICEO ICEX ICBO IEBO hFE-1 hFE-2
TYP.
UNIT
-1.1 -8.0 -1.8 -0.7 -1.0 -5.0 -1.0 -5.0
Silicon Power Transistors
PACKAGE OUTLINE
MJE2955T
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)

Silicon Power Transistors MJE2955T DESCRIPTION TO-220 packag

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