Silicon Power Transistors MJE1320 DESCRIPTION TO-220 package
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Silicon Power Transistors
MJE1320
DESCRIPTION TO-220 package voltage collector saturation voltage APPLICATIONS high-voltage ,power switching inductive circuits line operated switchmode applications
PINNING Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Tc=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 TC=100 CONDITIONS Open emitter Open base Open collector VALUE 1200 -65~150 -65~150 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case 1.56 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain current gain Collector outoput capacitance CONDITIONS IC=50mA; IB=0. IC=1A ;IB=0.5A TC=100 IC=2A ;IB=1A IC=1A ;IB=0.5A TC=100 IC=2A ;IB=1A VCEV=RatedValue;VBE(off)=1.5V TC=100 VEB=9V; IC=0 IC=2A VCE=5V IC=1A VCE=5V IE=0 VCB=10V;f=1.0MHz
MJE1320
SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICEV IEBO hFE-1 hFE-2
TYP.
UNIT
0.18 0.15
0.25 0.25
Switching times resistive load,Duty CycleA2%,tp=25µs Delay time Rise time Storage time Fall time
VCC=250V; IC=1A IB1=IB2=0.5A
Silicon Power Transistors
PACKAGE OUTLINE
MJE1320
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
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