Silicon Power Transistors MJE340 DESCRIPTION TO-126 package

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Silicon Power Transistors MJE340 DESCRIPTION TO-126 package

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Silicon Power Transistors
MJE340
DESCRIPTION TO-126 package power dissipation APPLICATIONS high-voltage general purpose applications transformerless ,line-operated equipment PINNING (see Fig.2)
Emitter Collector;connected mounting base Base DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(TC=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -65~150 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 6.25 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain CONDITIONS IC=1.0mA;IB=0 IC=100µA;IE=0 IE=100µA;IC=0 IC=100mA ;IB=10mA IC=100mA ;IB=10mA VCB=300V; IE=0 VEB=3V; IC=0 IC=50mA VCE=10V
MJE340
SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO
TYP.
UNIT
Silicon Power Transistors
PACKAGE OUTLINE
MJE340
Fig.2 Outline dimensions

Silicon Power Transistors MJE340 DESCRIPTION TO-126 package

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