Silicon Power Transistors MJE180/181/182 DESCRIPTION TO-126
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Silicon Power Transistors
MJE180/181/182
DESCRIPTION TO-126 package type MJE170/171/172 APPLICATIONS power audio amplifier current high speed switching applications PINNING (see Fig.2)
Emitter Collector;connected mounting base Base DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(TC=25
SYMBOL PARAMETER MJE180 VCBO Collector-base voltage MJE181 MJE182 MJE180 VCEO Collector-emitter voltage MJE181 MJE182 VEBO Tstg Emitter-base voltage Collector current Collector current-peak Base current Ta=25 Collector power dissipation TC=25 Junction temperature Storage temperature 12.5 -65~150 Open collector Open base Open emitter CONDITIONS VALUE UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER MJE180 V(BR)CEO Collector-emitter breakdown voltage MJE181 MJE182 VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(sat)-1 VBE(sat)-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage MJE180 ICBO Collector cut-off current MJE181 MJE182 IEBO hFE-1 hFE-2 hFE-3 Emitter cut-off current current gain current gain current gain Transition frequency Output capacitance IC=500mA ;IB=50mA IC=1.5A ;IB=150mA IC=3A ;IB=600mA IC=1.5A ;IB=150mA IC=3A ;IB=600mA IC=500mA VCE=1V VCB=60V; IE=0 TC=150 VCB=80V; IE=0 TC=150 VCB=100V; IE=0 TC=150 VEB=7V; IC=0 IC=100mA VCE=1V IC=500mA VCE=1V IC=1.5A VCE=1V IC=100mA VCE=10V IE=0 VCB=10V,f=0.1MHz IC=10mA;IB=0 CONDITIONS SYMBOL
MJE180/181/182
TYP.
UNIT
Silicon Power Transistors
PACKAGE OUTLINE
MJE180/181/182
Fig.2 Outline dimensions
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