Silicon Power Transistors MJE170/171/172 DESCRIPTION TO-126
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Silicon Power Transistors
MJE170/171/172
DESCRIPTION TO-126 package type MJE180/181/182 APPLICATIONS power audio amplifier current, high speed switching applications PINNING (see Fig.2)
Emitter Collector;connected mounting base Base DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(TC=25
SYMBOL PARAMETER MJE170 VCBO Collector-base voltage MJE171 MJE172 MJE170 VCEO Collector-emitter voltage MJE171 MJE172 VEBO Tstg Emitter-base voltage Collector current Collector current-peak Base current Ta=25 Collector power dissipation TC=25 Junction temperature Storage temperature 12.5 -65~150 Open collector Open base Open emitter CONDITIONS VALUE -100 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER MJE170 V(BR)CEO Collector-emitter breakdown voltage MJE171 MJE172 VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(sat)-1 VBE(sat)-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage MJE170 ICBO Collector cut-off current MJE171 MJE172 IEBO hFE-1 hFE-2 hFE-3 Emitter cut-off current current gain current gain current gain Transition frequency Output capacitance IC=-500mA ;IB=-50mA IC=-1.5A ;IB=-150mA IC=-3A ;IB=-600mA IC=-1.5A ;IB=-150mA IC=-3A ;IB=-600mA IC=-500mA VCE=-1V VCB=-60V; IE=0 TC=150 VCB=-80V; IE=0 TC=150 VCB=-100V; IE=0 TC=150 VEB=-7V; IC=0 IC=-100mA VCE=-1V IC=-500mA VCE=-1V IC=-1.5A VCE=-1V IC=-100mA VCE=-10V IE=0 VCB=-10V,f=0.1MHz IC=-10mA;IB=0 CONDITIONS
MJE170/171/172
SYMBOL
TYP.
UNIT
-0.3 -0.9 -1.7 -1.5 -2.0 -1.2 -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 -0.1
Silicon Power Transistors
PACKAGE OUTLINE
MJE170/171/172
Fig.2 Outline dimensions
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