Silicon Power Transistors MJ21194 DESCRIPTION TO-3 package t
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Silicon Power Transistors
MJ21194
DESCRIPTION TO-3 package type MJ21193 gain linearity APPLICATIONS high power audio output,disk head positioners linear applications PINNING(see Fig.2)
Base Emitter Fig.1 simplified outline (TO-3) symbol Collector DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(Tc=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector -65~200 -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance from junction case VALUE UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS
MJ21194
SYMBOL
TYP.
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0
VCE(sat)-1 VCE(sat)-2 VBE(ON)
Collector-emitter saturation voltage
IC=8A; IB=0.8A
Collector-emitter saturation voltage
IC=16A; IB=3.2A
Base-emitter voltage
IC=8A VCE=5V
ICEX
Collector cut-off current
VCE=250V; VBE(off)=1.5V VCE=200V; IB=0
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
current gain
IC=8A VCE=5V
hFE-2
current gain
IC=16A VCE=5V
Transition frequency
IC=1A VCE=10V,f=1MHz
Collector output capacitance Second breakdown current with base forward biased
f=1MHz;VCB=10V,IE=0 VCE=50V;t=1s(non-repetitive) VCE=80V;t=1s(non-repetitive)
Is/b
Silicon Power Transistors
PACKAGE OUTLINE
MJ21194
Fig.2 Outline dimensions (unindicated tolerance:±0.50
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