Silicon Power Transistors MJ21193 DESCRIPTION TO-3 package t

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Silicon Power Transistors MJ21193 DESCRIPTION TO-3 package t

Datasheet Thumbnail

Top Searches for this datasheet

Silicon Power Transistors
MJ21193
DESCRIPTION TO-3 package type MJ21194 gain linearity APPLICATIONS high power audio output,disk head positioners linear applications PINNING(see Fig.2)
Base Emitter Collector Fig.1 simplified outline (TO-3) symbol DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(Tc=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector -400 -250 -65~200 -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance from junction case VALUE UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS
MJ21193
SYMBOL
TYP.
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=-100mA ;IB=0
-250
VCE(sat)-1 VCE(sat)-2 VBE(ON)
Collector-emitter saturation voltage
IC=-8A; IB=-0.8A
-1.4
Collector-emitter saturation voltage
IC=-16A; IB=-3.2A
-4.0
Base-emitter voltage
IC=-8A VCE=-5V
-2.2
ICEX
Collector cut-off current
VCE=-250V; VBE(off)=-1.5V VCE=-200V; IB=0
-100
ICEO
Collector cut-off current
-100
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-100
hFE-1
current gain
IC=-8A VCE=-5V
hFE-2
current gain
IC=-16A VCE=-5V
Transition frequency
IC=-1A VCE=-10V,f=1MHz
Collector output capacitance Second breakdown current with base forward biased
f=1MHz;VCB=-10V,IE=0 VCE=-50V;t=1s(non-repetitive) VCE=-80V;t=1s(non-repetitive) -5.0 -2.5
Is/b
Silicon Power Transistors
PACKAGE OUTLINE
MJ21193
Fig.2 Outline dimensions (unindicated tolerance:±0.50

Silicon Power Transistors MJ21193 DESCRIPTION TO-3 package t

Top Searches for this datasheet

Other recent searches