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Silicon Power Transistors MJ15027 DESCRIPTION TO-3 package t
Top Searches for this datasheetSilicon Power Transistors MJ15027 DESCRIPTION TO-3 package type MJ15026 safe operating area APPLICATIONS high power audio ,stepping motor other linear applications solenoid drviers converters inverters PINNING(see Fig.2) Base Emitter Collector Fig.1 simplified outline (TO-3) symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25 SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -200 -200 -65~175 UNIT THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal resistance junction case 0.98 UNIT Silicon Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current current gain Transition frequency CONDITIONS IC=-50mA ;IB=0 IE=-1mA ;IC=0 IC=-10A; IB=-1A IC=-5A VCE=-5V VCB=-200V; IE=0 VEB=-7V; IC=0 IC=-5A VCE=-5V IC=-0.5A VCE=-12V -200 SYMBOL V(BR)CEO V(BR)EBO VCE(sat) ICBO IEBO MJ15027 TYP. UNIT -2.0 -1.5 -0.1 -0.1 Silicon Power Transistors PACKAGE OUTLINE MJ15027 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) Other recent searchesSLK2511 - SLK2511 SLK2511 Datasheet PAD50 - PAD50 PAD50 Datasheet LMR-240-UF - LMR-240-UF LMR-240-UF Datasheet KU10S40N - KU10S40N KU10S40N Datasheet HMC315 - HMC315 HMC315 Datasheet 54F175 - 54F175 54F175 Datasheet 74F175 - 74F175 74F175 Datasheet
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