Silicon Power Transistors MJ15004 DESCRIPTION TO-3 package t

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Silicon Power Transistors MJ15004 DESCRIPTION TO-3 package t

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Silicon Power Transistors
MJ15004
DESCRIPTION TO-3 package type MJ15003 safe operating area APPLICATIONS high power audio,disk head positioners other linear applications PINNING(see Fig.2)
Base Emitter Collector Fig.1 simplified outline (TO-3) symbol DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(TC=25
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Emitter current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -140 -140 -65~200 UNIT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current Emitter cut-off current current gain CONDITIONS IC=-0.2A ;IB=0 IC=-5A; IB=-0.5A IC=-5A VCE=-2V VCE=-140V; IB=0 VCE=-140V; VBE(off)=-1.5V TC=150 VEB=-5V; IC=0 IC=-5A VCE=-2V VCE=-50Vdc,t=1 Nonrepetitive VCE=-100Vdc,t=1 Nonrepetitive IE=0 VCB=-10V;f=1.0MHz IC=-0.5A VCE=-10V;f=0.5MHz -140
MJ15004
SYMBOL VCEO(SUS) VCE(sat) ICEO ICEX IEBO
TYP.
UNIT
-1.0 -2.0 -0.25 -0.1 -2.0 -0.1
Is/b
Second breakdown collector current With base forward biased
1000
Output capacitance Transition frequency
Silicon Power Transistors
PACKAGE OUTLINE
MJ15004
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

Silicon Power Transistors MJ15004 DESCRIPTION TO-3 package t

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