Silicon Power Transistors DESCRIPTION TO-126 package type BD233/2
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Silicon Power Transistors
DESCRIPTION TO-126 package type BD233/235 /237 APPLICATIONS medium power linear switching applications
PINNING DESCRIPTION Emitter Collector;connected mounting base Base
BD234 BD236 BD238
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER BD234 VCBO Collector-base voltage BD236 BD238 BD234 VCEO Collector-emitter voltage BD236 BD238 VEBO Tstg Emitter -base voltage Collector current (DC) Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -100 -65~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS
BD234 BD236 BD238
SYMBOL
TYP.
UNIT
VCEsat
Collector-emitter saturation voltage
IC=-1A; IB=-0.1A IC=-1A VCE=-2V
-0.6
Base-emitter voltage
-1.3
BD234 VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A; IB=0
BD236
BD238
BD234 ICBO Collector cut-off current
VCB=-45V; IE=0 VCB=-60V; IE=0 VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-150mA VCE=-2V IC=-1A VCE=-2V IC=-250mA; VCE=-10V -100
BD236
BD238
IEBO hFE-1 hFE-2
Emitter cut-off current
current gain
current gain
Transition frequency
Silicon Power Transistors
PACKAGE OUTLINE
BD234 BD236 BD238
Fig.2 Outline dimensions
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