Silicon Power Transistors DESCRIPTION TO-126 package type BD234 /
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Silicon Power Transistors
DESCRIPTION TO-126 package type BD234 /236 /238 APPLICATIONS medium power linear switching applications
PINNING DESCRIPTION Emitter Collector;connected mounting base Base
BD233 BD235 BD237
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER BD233 VCBO Collector-base voltage BD235 BD237 BD233 VCEO Collector-emitter voltage BD235 BD237 VEBO Tstg Emitter -base voltage Collector current (DC) Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -65~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter voltage BD233 VCEO(SUS) Collector-emitter sustaining voltage BD235 BD237 BD233 ICBO Collector cut-off current BD235 BD237 IEBO hFE-1 hFE-2 Emitter cut-off current current gain current gain Transition frequency VCB=45V; IE=0 VCB=60V; IE=0 VCB=100V; IE=0 VEB=5V; IC=0 IC=150mA VCE=2V IC=1A VCE=2V IC=250mA; VCE=10V IC=0.1A; IB=0 CONDITIONS IC=1A; IB=0.1A IC=1A VCE=2V
BD233 BD235 BD237
SYMBOL VCEsat
TYP.
UNIT
Silicon Power Transistors
PACKAGE OUTLINE
BD233 BD235 BD237
Fig.2 Outline dimensions
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